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"lee yj"的相關文件
顯示項目 51-100 / 228 (共5頁)
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| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As
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Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
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Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111)
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Liu, W-R; Li, Y-H; Hsieh, WF; Hsu, C-H; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As
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Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection
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Nieh, CW; Lee, YJ; Lee, WC; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
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Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy
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Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures
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Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics
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Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition
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Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Growth and structural characteristics of GaN/AlN/nanothick gamma-Al (2) O (3)/Si (111)
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Lee, WC; Lee, YJ; Tung, LT; Wu, SY; Lee, CH; Hong, M; Ng, HM; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-k gate dielectrics
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You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:17Z |
Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High-kappa Gate Dielectrics
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You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:17Z |
Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric
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Lee, KY; Chang, P; Chang, YC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures
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Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG; Chang, P; Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC |
| 臺大學術典藏 |
2018-09-10T06:28:22Z |
Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN
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Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; Hong, M; Chiu, YN; Kwo, J; Wang, Yeong-Her; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
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Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; Hong, M; Kwo, J; Cui, S; Ma, TP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
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Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Hsu, CH; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructures
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Huang, ML; Chiu, YN; Ho, CC; Chang, P; Hsu, CH; Hong, M; Kwo, J; MINGHWEI HONG; Hsu, YL; Lee, YJ; Chang, YH |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films
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Chang, YH; Soo, YL; Lee, WC; Huang, ML; Lee, YJ; Weng, SC; Sun, WH; Hong, M; Kwo, J; Lee, SF; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)
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Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:18Z |
Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering
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Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD
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Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface
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Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
MBE and ALD grown High k Dielectrics Gate Stacks on GaN
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Chang, YC; Lee, KY; Lee, WC; Lin, TD; Lee, YJ; Huang, ML; Hong, M; Kwo, J; Wang, YH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:12Z |
A novel approach of using a MBE template for ALD growth of high-$κ$ dielectrics
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Lee, KY; Lee, WC; Huang, ML; Chang, CH; Lee, YJ; Chiu, YK; Wu, TB; Hong, M; Kwo, R; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:12Z |
MBE grown high $κ$ dielectrics Ga 2 O 3 (Gd 2 O 3) on GaN
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Chang, Yao-Chung; Lee, YJ; Chiu, YN; Lin, Tsung-Da; Wu, SY; Chiu, Han-Chin; Kwo, J; Wang, Yeong-Her; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
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Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Structure of HfO2 films epitaxially grown on GaAs (001)
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Hsu, C-H; Chang, P; Lee, WC; Yang, ZK; Lee, YJ; Hong, M; Kwo, J; Huang, CM; Lee, HY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:15Z |
Molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectrics
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Lee, KY; Lee, WC; Lee, YJ; Huang, ML; Chang, CH; Wu, TB; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:15Z |
Structural and electrical characteristics of Ga2O3 (Gd2O3)/GaAs under high temperature annealing
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Chen, CP; Lee, YJ; Chang, YC; Yang, ZK; Hong, M; Kwo, J; Lee, HY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:16Z |
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al̃ 2Õ 3
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Huang, ML; Chang, YC; Chang, CH; Lee, YJ; Chang, P; Kwo, J; Wu, TB; Hong, M; Huang, ML; Chang, YC; Chang, CH; Lee, YJ; Chang, P; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface
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Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs
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Kwo, J; Hong, M; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T; MINGHWEI HONG |
| 國家衛生研究院 |
2018-05-01 |
Association between influenza vaccination and the reduced risk of acute kidney injury among older people: A nested case-control study
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Shih, CH;Lee, YJ;Chao, PW;Kuo, SC;Ou, SM;Huang, HM;Chen, YT |
| 國家衛生研究院 |
2016-07-15 |
Long-term mortality and major adverse cardiovascular events in sepsis survivors. A nationwide population-based study
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Ou, SM;Chu, H;Chao, PW;Lee, YJ;Kuo, SC;Chen, TJ;Tseng, CM;Shih, CJ;Chen, YT |
| 國家衛生研究院 |
2016-07 |
Association between use of dipeptidyl peptidase-4 inhibitors and the risk of Acute Kidney Injury: A nested case-control study
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Shih, CJ;Lee, YJ;Lo, YH;Kuo, SC;Ou, SM;Chen, YT |
| 國家衛生研究院 |
2016-01-19 |
Risks of death and stroke in patients undergoing hemodialysis with new-onset atrial fibrillation: A competing-risk analysis of a nationwide cohort
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Shih, CJ;Ou, SM;Chao, PW;Kuo, SC;Lee, YJ;Yang, CY;Tarng, DC;Lin, CC;Huang, PH;Li, SY;Chen, YT |
| 國家衛生研究院 |
2015-11 |
Effects on clinical outcomes of adding dipeptidyl peptidase-4 inhibitors versus sulfonylureas to metformin therapy in patients with type 2 diabetes mellitus
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Ou, SM;Shih, CJ;Chao, PW;Chu, H;Kuo, SC;Lee, YJ;Wang, SJ;Yang, CY;Lin, CC;Chen, TJ;Tarng, DC;Li, SY;Chen, YT |
| 國家衛生研究院 |
2015-10 |
Comparative effectiveness of angiotensin-converting enzyme inhibitors and angiotensin II receptor blockers in terms of major cardiovascular disease outcomes in elderly patients: A nationwide population-based cohort study
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Chien, SC;Ou, SM;Shih, CJ;Chao, PW;Li, SY;Lee, YJ;Kuo, SC;Wang, SJ;Chen, TJ;Tarng, DC;Chu, H;Chen, YT |
| 國立交通大學 |
2014-12-08T15:44:33Z |
High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel
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Chang, SJ; Chang, CY; Chen, CM; Chao, TS; Lee, YJ; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:25Z |
The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor
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Chen, CM; Chang, SJ; Chou, JW; Lin, T; Yeh, WK; Chang, CY; Luo, WZ; Lee, YJ; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:21Z |
The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors
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Lee, YJ; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:39Z |
High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts
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Chao, TS; Lee, YJ; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Miscibility, specific interactions, and self-assembly behavior of phenolic/polyhedral oligomeric silsesquioxane hybrids
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Lee, YJ; Kuo, SW; Huang, WJ; Lee, HY; Chang, FC |
| 國立交通大學 |
2014-12-08T15:39:25Z |
Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors
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Chao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY |
| 國立交通大學 |
2014-12-08T15:38:40Z |
Syntheses, thermal properties, and phase morphologies of novel benzoxazines functionalized with polyhedral oligomeric silsesquioxane (POSS) nanocomposites
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Lee, YJ; Kuo, SW; Su, YC; Chen, JK; Tu, CW; Chang, FC |
| 國立交通大學 |
2014-12-08T15:35:51Z |
Polyimide and polyhedral oligomeric silsesquioxane nanocomposites for low-dielectric applications
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Lee, YJ; Huang, JM; Kuo, SW; Lu, JS; Chang, FC |
顯示項目 51-100 / 228 (共5頁)
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