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Showing items 51-60 of 228 (23 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As
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Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
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Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111)
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Liu, W-R; Li, Y-H; Hsieh, WF; Hsu, C-H; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As
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Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection
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Nieh, CW; Lee, YJ; Lee, WC; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
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Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy
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Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures
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Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics
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Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition
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Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG |
Showing items 51-60 of 228 (23 Page(s) Totally)
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