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"lehnen p"
Showing items 1-11 of 11 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:18Z |
Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatment
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Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY |
| 國立交通大學 |
2019-04-02T06:00:17Z |
Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments
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Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:40:23Z |
High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory
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Chien, CH; Wang, DY; Yang, MJ; Lehnen, P; Leu, CC; Chuang, SH; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:37:26Z |
The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode
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Lu, WT; Lin, PC; Huang, TY; Chien, CH; Yang, MJ; Huang, IJ; Lehnen, P |
| 國立交通大學 |
2014-12-08T15:37:15Z |
HfO2 MIS capacitor with copper gate electrode
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Perng, TH; Chien, CH; Chen, CW; Yang, MJ; Lehnen, P; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stack
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Lu, WT; Chien, CH; Huang, IJ; Yang, MJ; Lehnen, P; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:09Z |
High-density MIM capacitors with HfO(2) dielectrics
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Perng, TH; Chien, CH; Chen, CW; Lehnen, P; Chang, CY |
| 國立交通大學 |
2014-12-08T15:36:22Z |
Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments
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Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:36:00Z |
Low-temperature growth of polycrystalline ge films on SiO2 substrate by HDPCVD
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Yang, MJ; Shieh, J; Hsu, SL; Huang, IJ; Leu, CC; Shen, SW; Huang, TY; Lehnen, P; Chien, CH |
| 國立交通大學 |
2014-12-08T15:18:06Z |
Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO(2) gate stacks by post deposition N(2)O plasma treatment
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Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY |
| 國立交通大學 |
2014-12-08T15:16:58Z |
Improved reliability of HfO2/SiON gate stack by fluorine incorporation
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Lu, WT; Chiein, CH; Lan, WT; Lee, TC; Lehnen, P; Huang, TY |
Showing items 1-11 of 11 (1 Page(s) Totally)
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