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机构 日期 题名 作者
國立交通大學 2019-04-02T06:00:53Z A novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetry Lin, HY; Lei, TF; Jeng, JJ; Pan, CL; Chang, CY
國立交通大學 2019-04-02T06:00:52Z Suppression of boron penetration in BF2+-implanted poly-Si gate Chao, TS; Chu, CH; Wang, CF; Ho, KJ; Lei, TF; Lee, CL
國立交通大學 2019-04-02T06:00:22Z MOS magnetic current sensor based on standard CMOS process Yang, HM; Lei, TF; Huang, YC; Lee, CL
國立交通大學 2019-04-02T05:59:49Z Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition process Lin, YM; Jang, SM; Yu, CH; Lei, TF
國立交通大學 2019-04-02T05:59:48Z Monitoring trapped charge generation for gate oxide under stress Lin, YH; Lee, CL; Lei, TF
國立交通大學 2019-04-02T05:59:45Z Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY
國立交通大學 2019-04-02T05:59:33Z Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation Lai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY
國立交通大學 2019-04-02T05:59:28Z A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH CHENG, JY; LEI, TF; CHAO, TS
國立交通大學 2019-04-02T05:59:15Z Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide Lin, YH; Lee, CL; Lei, TF
國立交通大學 2019-04-02T05:58:33Z Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor Chao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF

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