| 國立交通大學 |
2014-12-08T15:04:03Z |
PD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIER
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:04:02Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
|
CHEN, TP; LEI, TF; LIN, HC; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:01Z |
SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET
|
WU, SL; LEE, CL; LEI, TF; CHEN, JF; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:00Z |
THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:00Z |
IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:52Z |
MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON
|
CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:46Z |
THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS
|
YANG, CK; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:33Z |
SUPPRESSION OF BORON PENETRATION IN PMOS BY USING BRIDE GETTERING EFFECT IN POLY-SI GATE
|
LIN, YH; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:32Z |
CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE
|
CHEN, TP; LEI, TF; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:31Z |
INHIBITION OF BIRDS BEAK IN LOCOS BY NEW BUFFER N2O OXIDE
|
CHAO, TS; CHENG, JY; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:30Z |
CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
|
CHAO, TS; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:26Z |
THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS
|
LIN, YH; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:25Z |
FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O
|
CHAO, TS; CHEN, WH; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:22Z |
NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
|
LIN, YH; LAI, SC; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:22Z |
THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS
|
LIOU, BW; WU, YH; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:22Z |
HIGH-BARRIER PT/AL/N-INP DIODE
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:21Z |
INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS
|
CHEN, TP; LEI, TF; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:03:20Z |
ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS
|
YANG, CK; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:16Z |
AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:15Z |
A DOUBLE METAL STRUCTURE PT/AL/N-INP DIODE
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:13Z |
THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
|
LAI, CS; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:10Z |
A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
|
CHENG, JY; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:07Z |
HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
|
LIOU, BW; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:06Z |
POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE
|
LAI, CS; LEI, TF; LEE, CL; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:04Z |
PTGE OHMIC CONTACT TO N-TYPE INP
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:03Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTION
|
LEI, TF; CHEN, TP; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:03Z |
CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS
|
YANG, CK; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:01Z |
CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
|
LIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:03:00Z |
RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
|
YANG, CK; LEE, CL; LEI, TF; CHERN, HN |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon
|
Wu, SL; Chiao, DM; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET
|
Wu, SL; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:49Z |
Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
|
Chang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT |
| 國立交通大學 |
2014-12-08T15:02:47Z |
The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source
|
Huang, CT; Lei, TF; Chu, CH; Shvu, SH |
| 國立交通大學 |
2014-12-08T15:02:40Z |
A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset
|
Lai, CS; Lee, CL; Lei, TF; Chern, HN |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS
|
Lin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:02:24Z |
A novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetry
|
Lin, HY; Lei, TF; Jeng, JJ; Pan, CL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:02:21Z |
Characteristics of top-gate polysilicon thin-film transistors fabricated on fluorine-implanted and crystallized amorphous silicon films
|
Yang, CK; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:02:21Z |
Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
|
Chao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:20Z |
High-resolution MOS magnetic sensor with thin oxide in standard submicron CMOS process
|
Yang, HM; Huang, YC; Lei, TF; Lee, CL; Chao, SC |
| 國立交通大學 |
2014-12-08T15:02:16Z |
Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors
|
Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP |
| 國立交通大學 |
2014-12-08T15:02:13Z |
Suppression of boron penetration in BF2+-implanted poly-Si gate
|
Chao, TS; Chu, CH; Wang, CF; Ho, KJ; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:02:08Z |
Investigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysilicon
|
Wu, SL; Chen, CY; Lin, TY; Lee, CL; Lei, TF; Liang, MS |
| 國立交通大學 |
2014-12-08T15:02:07Z |
A novel planarization of oxide-filled shallow-trench isolation
|
Cheng, JY; Lei, TF; Chao, TS; Yen, DLW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:02:02Z |
Effects of bromine-methanol and hydrogen chloride pretreatments on Pt/Al/n-InP diodes
|
Huang, WC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:01:56Z |
A novel shallow trench isolation technique
|
Cheng, JY; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:01:56Z |
Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
|
Chao, TS; Chien, CH; Hao, CP; Liaw, MC; Chu, CH; Chang, CY; Lei, TF; Sun, WT; Hsu, CH |
| 國立交通大學 |
2014-12-08T15:01:54Z |
MOS magnetic current sensor based on standard CMOS process
|
Yang, HM; Lei, TF; Huang, YC; Lee, CL |
| 國立交通大學 |
2014-12-08T15:01:44Z |
Hydrogen and oxygen plasma effects on polycrystalline silicon thin films of various thicknesses
|
Liou, BW; Lee, CL; Lei, TF; Wu, YH |
| 國立交通大學 |
2014-12-08T15:01:42Z |
Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure
|
Yang, WL; Lin, CJ; Chao, TS; Liu, DG; Lei, TF |
| 國立交通大學 |
2014-12-08T15:01:39Z |
Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide
|
Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY |
