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"lei tf"的相关文件
显示项目 191-214 / 214 (共9页)
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| 國立交通大學 |
2014-12-08T15:02:53Z |
Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET
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Wu, SL; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:49Z |
Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
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Chang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT |
| 國立交通大學 |
2014-12-08T15:02:47Z |
The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source
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Huang, CT; Lei, TF; Chu, CH; Shvu, SH |
| 國立交通大學 |
2014-12-08T15:02:40Z |
A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset
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Lai, CS; Lee, CL; Lei, TF; Chern, HN |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS
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Lin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:02:24Z |
A novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetry
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Lin, HY; Lei, TF; Jeng, JJ; Pan, CL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:02:21Z |
Characteristics of top-gate polysilicon thin-film transistors fabricated on fluorine-implanted and crystallized amorphous silicon films
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Yang, CK; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:02:21Z |
Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
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Chao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:20Z |
High-resolution MOS magnetic sensor with thin oxide in standard submicron CMOS process
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Yang, HM; Huang, YC; Lei, TF; Lee, CL; Chao, SC |
| 國立交通大學 |
2014-12-08T15:02:16Z |
Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors
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Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP |
| 國立交通大學 |
2014-12-08T15:02:13Z |
Suppression of boron penetration in BF2+-implanted poly-Si gate
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Chao, TS; Chu, CH; Wang, CF; Ho, KJ; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:02:08Z |
Investigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysilicon
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Wu, SL; Chen, CY; Lin, TY; Lee, CL; Lei, TF; Liang, MS |
| 國立交通大學 |
2014-12-08T15:02:07Z |
A novel planarization of oxide-filled shallow-trench isolation
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Cheng, JY; Lei, TF; Chao, TS; Yen, DLW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:02:02Z |
Effects of bromine-methanol and hydrogen chloride pretreatments on Pt/Al/n-InP diodes
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Huang, WC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:01:56Z |
A novel shallow trench isolation technique
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Cheng, JY; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:01:56Z |
Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
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Chao, TS; Chien, CH; Hao, CP; Liaw, MC; Chu, CH; Chang, CY; Lei, TF; Sun, WT; Hsu, CH |
| 國立交通大學 |
2014-12-08T15:01:54Z |
MOS magnetic current sensor based on standard CMOS process
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Yang, HM; Lei, TF; Huang, YC; Lee, CL |
| 國立交通大學 |
2014-12-08T15:01:44Z |
Hydrogen and oxygen plasma effects on polycrystalline silicon thin films of various thicknesses
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Liou, BW; Lee, CL; Lei, TF; Wu, YH |
| 國立交通大學 |
2014-12-08T15:01:42Z |
Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure
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Yang, WL; Lin, CJ; Chao, TS; Liu, DG; Lei, TF |
| 國立交通大學 |
2014-12-08T15:01:39Z |
Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide
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Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY |
| 國立交通大學 |
2014-12-08T15:01:35Z |
The characteristics of polysilicon oxide grown on amorphous silicon deposited from disilane
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Lin, YM; Lei, TF |
| 國立交通大學 |
2014-12-08T15:01:34Z |
Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition process
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Lin, YM; Jang, SM; Yu, CH; Lei, TF |
| 國立交通大學 |
2014-12-08T15:01:30Z |
Monitoring trapped charge generation for gate oxide under stress
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Lin, YH; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:01:07Z |
Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion source
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Chao, TS; Kuo, CP; Lei, TF; Chen, TP; Huang, TY; Chang, CY |
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