| 國立交通大學 |
2014-12-08T15:05:26Z |
IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING
|
WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:25Z |
AN SCR WITH SIMPLE MIS STRUCTURE
|
CHANG, DCY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:14Z |
MEASUREMENT OF ULTRATHIN (LESS-THAN-100-A) OXIDE-FILMS BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY
|
CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:11Z |
A REAL-TIME C-V MEASUREMENT CIRCUIT FOR MOS CAPACITORS UNDER CURRENT STRESSING
|
LEE, CL; LEI, TF; HO, JH; WANG, WT |
| 國立交通大學 |
2014-12-08T15:05:03Z |
HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS
|
WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:52Z |
POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT
|
CHAO, TS; LEE, CL; LEI, TF; YEN, YT |
| 國立交通大學 |
2014-12-08T15:04:50Z |
INVESTIGATION ON THE INTERFACE OF THE POLYCRYSTALLINE SILICON CONTACTED DIODE FORMED WITH A STACKED AMORPHOUS-SILICON FILM
|
WU, SL; LEE, CL; LEI, TF; LEE, TL; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:48Z |
CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATION
|
WU, SL; LEE, CL; LEI, TF; LIANG, MS |
| 國立交通大學 |
2014-12-08T15:04:45Z |
A STUDY OF THE INTERFACIAL LAYER OF AL AND AL(1-PERCENT SI)-SI CONTACTS USING A ZERO-LAYER ELLIPSOMETRY MODEL
|
CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:42Z |
THE IMPACT OF TITANIUM SILICIDE ON THE CONTACT RESISTANCE FOR SHALLOW JUNCTION FORMED BY OUT-DIFFUSION OF ARSENIC FROM POLYSILICON
|
YANG, WL; LEI, TF; HUANG, CT; LEE, CL |
| 國立交通大學 |
2014-12-08T15:04:37Z |
H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:37Z |
ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS
|
WU, SL; LIN, TY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:31Z |
THE REFRACTIVE-INDEX OF INP AND ITS OXIDE MEASURED BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY
|
CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:29Z |
ULTRATHIN TEXTURED POLYCRYSTALLINE OXIDE WITH A HIGH ELECTRON CONDUCTION EFFICIENCY PREPARED BY THERMAL-OXIDATION OF THIN POLYCRYSTALLINE SILICON FILM ON N+ POLYCRYSTALLINE SILICON
|
WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:29Z |
THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER
|
CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:29Z |
ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERS
|
LIU, DC; LEE, CP; TSAI, CM; LEI, TF; TSANG, JS; CHIANG, WH; TU, YK |
| 國立交通大學 |
2014-12-08T15:04:26Z |
ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE
|
WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:25Z |
TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS)
|
WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:24Z |
CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
|
CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:24Z |
THE ENHANCED STARK EFFECTS OF COUPLED QUANTUM-WELLS AND THEIR APPLICATION TO TUNABLE IR PHOTODETECTORS
|
HUANG, YM; LIEN, CH; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:21Z |
ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
|
LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; CHAO, CY |
| 國立交通大學 |
2014-12-08T15:04:21Z |
GROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
|
LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; CHAO, CY |
| 國立交通大學 |
2014-12-08T15:04:19Z |
CHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILM
|
WU, SL; LEE, CL; LEI, TF; CHANG, HC |
| 國立交通大學 |
2014-12-08T15:04:16Z |
THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS
|
WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:15Z |
THE EFFECTS OF H-2-O-2-PLASMA TREATMENT ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:07Z |
DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURES
|
LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:04:06Z |
THE DOUBLE RESONANT ENHANCEMENT OF OPTICAL 2ND-HARMONIC SUSCEPTIBILITY IN THE COMPOSITIONALLY ASYMMETRIC COUPLED-QUANTUM-WELL
|
LIEN, CS; HUANG, YM; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:05Z |
CORRELATION OF POLYSILICON THIN-FILM-TRANSISTOR CHARACTERISTICS TO DEFECT STATES VIA THERMAL ANNEALING
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:04Z |
MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY
|
CHAO, TS; LEI, TF; CHANG, CY; LEE, CL |
| 國立交通大學 |
2014-12-08T15:04:04Z |
ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION
|
WU, SL; LEE, CL; LEI, TF; CHEN, CF; CHEN, LJ; HO, KZ; LING, YC |
| 國立交通大學 |
2014-12-08T15:04:03Z |
PD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIER
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:04:02Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
|
CHEN, TP; LEI, TF; LIN, HC; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:01Z |
SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET
|
WU, SL; LEE, CL; LEI, TF; CHEN, JF; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:00Z |
THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:00Z |
IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:52Z |
MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON
|
CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:46Z |
THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS
|
YANG, CK; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:33Z |
SUPPRESSION OF BORON PENETRATION IN PMOS BY USING BRIDE GETTERING EFFECT IN POLY-SI GATE
|
LIN, YH; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:32Z |
CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE
|
CHEN, TP; LEI, TF; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:31Z |
INHIBITION OF BIRDS BEAK IN LOCOS BY NEW BUFFER N2O OXIDE
|
CHAO, TS; CHENG, JY; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:30Z |
CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
|
CHAO, TS; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:26Z |
THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS
|
LIN, YH; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:25Z |
FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O
|
CHAO, TS; CHEN, WH; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:22Z |
NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
|
LIN, YH; LAI, SC; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:22Z |
THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS
|
LIOU, BW; WU, YH; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:22Z |
HIGH-BARRIER PT/AL/N-INP DIODE
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:21Z |
INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS
|
CHEN, TP; LEI, TF; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:03:20Z |
ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS
|
YANG, CK; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:16Z |
AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:15Z |
A DOUBLE METAL STRUCTURE PT/AL/N-INP DIODE
|
HUANG, WC; LEI, TF; LEE, CL |
