| 國立交通大學 |
2014-12-08T15:03:30Z |
CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
|
CHAO, TS; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:26Z |
THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS
|
LIN, YH; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:25Z |
FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O
|
CHAO, TS; CHEN, WH; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:22Z |
NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
|
LIN, YH; LAI, SC; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:22Z |
THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS
|
LIOU, BW; WU, YH; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:22Z |
HIGH-BARRIER PT/AL/N-INP DIODE
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:21Z |
INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS
|
CHEN, TP; LEI, TF; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:03:20Z |
ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS
|
YANG, CK; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:16Z |
AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:15Z |
A DOUBLE METAL STRUCTURE PT/AL/N-INP DIODE
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:13Z |
THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
|
LAI, CS; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:10Z |
A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
|
CHENG, JY; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:07Z |
HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
|
LIOU, BW; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:06Z |
POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE
|
LAI, CS; LEI, TF; LEE, CL; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:04Z |
PTGE OHMIC CONTACT TO N-TYPE INP
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:03Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTION
|
LEI, TF; CHEN, TP; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:03Z |
CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS
|
YANG, CK; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:01Z |
CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
|
LIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:03:00Z |
RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
|
YANG, CK; LEE, CL; LEI, TF; CHERN, HN |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon
|
Wu, SL; Chiao, DM; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET
|
Wu, SL; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:49Z |
Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
|
Chang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT |
| 國立交通大學 |
2014-12-08T15:02:47Z |
The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source
|
Huang, CT; Lei, TF; Chu, CH; Shvu, SH |
| 國立交通大學 |
2014-12-08T15:02:40Z |
A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset
|
Lai, CS; Lee, CL; Lei, TF; Chern, HN |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS
|
Lin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS |
