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Showing items 1-10 of 214 (22 Page(s) Totally) 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page
| 國立交通大學 |
2019-04-02T06:00:53Z |
A novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetry
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Lin, HY; Lei, TF; Jeng, JJ; Pan, CL; Chang, CY |
| 國立交通大學 |
2019-04-02T06:00:52Z |
Suppression of boron penetration in BF2+-implanted poly-Si gate
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Chao, TS; Chu, CH; Wang, CF; Ho, KJ; Lei, TF; Lee, CL |
| 國立交通大學 |
2019-04-02T06:00:22Z |
MOS magnetic current sensor based on standard CMOS process
|
Yang, HM; Lei, TF; Huang, YC; Lee, CL |
| 國立交通大學 |
2019-04-02T05:59:49Z |
Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition process
|
Lin, YM; Jang, SM; Yu, CH; Lei, TF |
| 國立交通大學 |
2019-04-02T05:59:48Z |
Monitoring trapped charge generation for gate oxide under stress
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Lin, YH; Lee, CL; Lei, TF |
| 國立交通大學 |
2019-04-02T05:59:45Z |
Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide
|
Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY |
| 國立交通大學 |
2019-04-02T05:59:33Z |
Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
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Lai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY |
| 國立交通大學 |
2019-04-02T05:59:28Z |
A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
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CHENG, JY; LEI, TF; CHAO, TS |
| 國立交通大學 |
2019-04-02T05:59:15Z |
Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
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Lin, YH; Lee, CL; Lei, TF |
| 國立交通大學 |
2019-04-02T05:58:33Z |
Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
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Chao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF |
Showing items 1-10 of 214 (22 Page(s) Totally) 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page
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