| 國立交通大學 |
2014-12-08T15:04:03Z |
PD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIER
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:04:02Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
|
CHEN, TP; LEI, TF; LIN, HC; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:01Z |
SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET
|
WU, SL; LEE, CL; LEI, TF; CHEN, JF; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:00Z |
THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:00Z |
IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:52Z |
MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON
|
CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:46Z |
THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS
|
YANG, CK; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:33Z |
SUPPRESSION OF BORON PENETRATION IN PMOS BY USING BRIDE GETTERING EFFECT IN POLY-SI GATE
|
LIN, YH; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:32Z |
CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE
|
CHEN, TP; LEI, TF; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:31Z |
INHIBITION OF BIRDS BEAK IN LOCOS BY NEW BUFFER N2O OXIDE
|
CHAO, TS; CHENG, JY; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:30Z |
CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
|
CHAO, TS; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:26Z |
THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS
|
LIN, YH; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:25Z |
FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O
|
CHAO, TS; CHEN, WH; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:22Z |
NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
|
LIN, YH; LAI, SC; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:22Z |
THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS
|
LIOU, BW; WU, YH; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:22Z |
HIGH-BARRIER PT/AL/N-INP DIODE
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:21Z |
INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS
|
CHEN, TP; LEI, TF; CHANG, CY; HSIEH, WY; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:03:20Z |
ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS
|
YANG, CK; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:16Z |
AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
|
CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:15Z |
A DOUBLE METAL STRUCTURE PT/AL/N-INP DIODE
|
HUANG, WC; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:13Z |
THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
|
LAI, CS; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:10Z |
A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
|
CHENG, JY; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:07Z |
HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
|
LIOU, BW; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:03:06Z |
POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE
|
LAI, CS; LEI, TF; LEE, CL; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:03:04Z |
PTGE OHMIC CONTACT TO N-TYPE INP
|
HUANG, WC; LEI, TF; LEE, CL |
