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Showing items 171-195 of 214  (9 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:03:30Z CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O CHAO, TS; LEI, TF
國立交通大學 2014-12-08T15:03:26Z THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS LIN, YH; LEE, CL; LEI, TF; CHAO, TS
國立交通大學 2014-12-08T15:03:25Z FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O CHAO, TS; CHEN, WH; LEI, TF
國立交通大學 2014-12-08T15:03:22Z NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS LIN, YH; LAI, SC; LEE, CL; LEI, TF; CHAO, TS
國立交通大學 2014-12-08T15:03:22Z THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS LIOU, BW; WU, YH; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:03:22Z HIGH-BARRIER PT/AL/N-INP DIODE HUANG, WC; LEI, TF; LEE, CL
國立交通大學 2014-12-08T15:03:21Z INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS CHEN, TP; LEI, TF; CHANG, CY; HSIEH, WY; CHEN, LJ
國立交通大學 2014-12-08T15:03:20Z ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS YANG, CK; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:03:16Z AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS CHERN, HN; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:03:15Z A DOUBLE METAL STRUCTURE PT/AL/N-INP DIODE HUANG, WC; LEI, TF; LEE, CL
國立交通大學 2014-12-08T15:03:13Z THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O LAI, CS; LEI, TF; LEE, CL
國立交通大學 2014-12-08T15:03:10Z A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH CHENG, JY; LEI, TF; CHAO, TS
國立交通大學 2014-12-08T15:03:07Z HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING LIOU, BW; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:03:06Z POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE LAI, CS; LEI, TF; LEE, CL; CHAO, TS
國立交通大學 2014-12-08T15:03:04Z PTGE OHMIC CONTACT TO N-TYPE INP HUANG, WC; LEI, TF; LEE, CL
國立交通大學 2014-12-08T15:03:03Z LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTION LEI, TF; CHEN, TP; LIN, HC; CHANG, CY
國立交通大學 2014-12-08T15:03:03Z CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS YANG, CK; LEI, TF; LEE, CL
國立交通大學 2014-12-08T15:03:01Z CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM LIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD
國立交通大學 2014-12-08T15:03:00Z RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS YANG, CK; LEE, CL; LEI, TF; CHERN, HN
國立交通大學 2014-12-08T15:02:53Z Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon Wu, SL; Chiao, DM; Lee, CL; Lei, TF
國立交通大學 2014-12-08T15:02:53Z Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET Wu, SL; Lee, CL; Lei, TF
國立交通大學 2014-12-08T15:02:49Z Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films Chang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT
國立交通大學 2014-12-08T15:02:47Z The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source Huang, CT; Lei, TF; Chu, CH; Shvu, SH
國立交通大學 2014-12-08T15:02:40Z A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset Lai, CS; Lee, CL; Lei, TF; Chern, HN
國立交通大學 2014-12-08T15:02:33Z Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS Lin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS

Showing items 171-195 of 214  (9 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 > >>
View [10|25|50] records per page