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"lei tf"的相關文件
顯示項目 56-80 / 214 (共9頁)
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| 國立交通大學 |
2014-12-08T15:41:51Z |
A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film
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Wang, JC; Chiao, SH; Lee, CL; Lei, TF; Lin, YM; Wang, MF; Chen, SC; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier
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Yang, WL; Wu, WF; You, HC; Ou, KL; Lei, TF; Chou, CP |
| 國立交通大學 |
2014-12-08T15:41:43Z |
Effect of CF4 plasma pretreatment on low temperature oxides
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Chang, TY; Chen, HW; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:41:37Z |
Growing high-performance tunneling oxide by CF4 plasma pretreatment
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Chang, TY; Lee, JW; Lei, TF; Lee, CL; Wen, HC |
| 國立交通大學 |
2014-12-08T15:41:32Z |
Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon films
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Lee, MZ; Chang, YA; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:41:27Z |
Effects of BCl3 passivation on Pt/Al/n-InP diodes
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Huang, WC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:41:08Z |
Novel vertical polysilicon thin-film transistor with excimer-laser annealing
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Lee, MZ; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Highly reliable nickel silicide formation with a Zr capping layer
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Lee, TL; Lee, JW; Lee, MC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:40:24Z |
A one-step single-cleaning solution for CMOS processes
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Chao, TS; Yeh, CH; Pan, TM; Lei, TF; Li, YH |
| 國立交通大學 |
2014-12-08T15:40:13Z |
Characterization of temperature dependence for HfO2 gate dielectrics treated in NH3 plasma
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Wang, JC; Shie, DC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:40:06Z |
High reliability ultrathin interpolyoxynitride dielectrics prepared by N2O plasma annealing
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Wang, JC; Lee, JW; Kuo, LT; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:40:05Z |
H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
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Yu, CM; Lin, HC; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Carrier transportation of rapid thermal annealed CeO2 gate dielectrics
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Wang, JC; Chiang, KC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:39:40Z |
Improved characteristics of ultrathin CeO2 by using postnitridation annealing
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Wang, JC; Hung, YP; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:29Z |
Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics
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Wang, JC; Shie, DC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Efficient improvement of hot-carrier-induced device's degradation for sub-0.1 mu m complementary metal-oxide-semiconductor field-effect-transistor technology
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Lin, JC; Yeh, WK; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:00Z |
Fabrication of sub-60-nm contact holes in silicon dioxide layers
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Ko, FH; You, HC; Chu, TC; Lei, TF; Hsu, CC; Chen, HL |
| 國立交通大學 |
2014-12-08T15:38:47Z |
Novel one-step aqueous solutions to replace pregate oxide cleans
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Pan, TM; Lei, TF; Ko, FH; Chao, TS; Chin, TH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure
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Kuo, PY; Chao, TS; Lei, TF |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
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Wang, YW; Cheng, HL; Wang, YK; Hu, TH; Ho, JC; Lee, CC; Lei, TF; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:37:03Z |
CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs
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Wang, SD; Lo, WH; Lei, TF |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Improvement of junction leakage by using a Zr cap layer on a 30 nm ultrashallow nickel-silicide junction
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Lee, TL; Lee, MZ; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:36:04Z |
Observation of localized breakdown spots in thin SiO2 films using scanning capacitance microscopy
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Wang, SD; Chang, MN; Chen, CY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:27:51Z |
IMPROVED ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS
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YANG, CK; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:27:34Z |
Low temperature (850 degrees C) two-step N2O annealed thin gate oxides
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Lai, CS; Lee, CL; Lei, TF; Chao, TS; Peng, CH; Wang, HC |
顯示項目 56-80 / 214 (共9頁)
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