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Showing items 66-115 of 214 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:06Z |
High reliability ultrathin interpolyoxynitride dielectrics prepared by N2O plasma annealing
|
Wang, JC; Lee, JW; Kuo, LT; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:40:05Z |
H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
|
Yu, CM; Lin, HC; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Carrier transportation of rapid thermal annealed CeO2 gate dielectrics
|
Wang, JC; Chiang, KC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:39:40Z |
Improved characteristics of ultrathin CeO2 by using postnitridation annealing
|
Wang, JC; Hung, YP; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:29Z |
Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics
|
Wang, JC; Shie, DC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Efficient improvement of hot-carrier-induced device's degradation for sub-0.1 mu m complementary metal-oxide-semiconductor field-effect-transistor technology
|
Lin, JC; Yeh, WK; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:00Z |
Fabrication of sub-60-nm contact holes in silicon dioxide layers
|
Ko, FH; You, HC; Chu, TC; Lei, TF; Hsu, CC; Chen, HL |
| 國立交通大學 |
2014-12-08T15:38:47Z |
Novel one-step aqueous solutions to replace pregate oxide cleans
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Pan, TM; Lei, TF; Ko, FH; Chao, TS; Chin, TH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure
|
Kuo, PY; Chao, TS; Lei, TF |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
|
Wang, YW; Cheng, HL; Wang, YK; Hu, TH; Ho, JC; Lee, CC; Lei, TF; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:37:03Z |
CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs
|
Wang, SD; Lo, WH; Lei, TF |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Improvement of junction leakage by using a Zr cap layer on a 30 nm ultrashallow nickel-silicide junction
|
Lee, TL; Lee, MZ; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:36:04Z |
Observation of localized breakdown spots in thin SiO2 films using scanning capacitance microscopy
|
Wang, SD; Chang, MN; Chen, CY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:27:51Z |
IMPROVED ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS
|
YANG, CK; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:27:34Z |
Low temperature (850 degrees C) two-step N2O annealed thin gate oxides
|
Lai, CS; Lee, CL; Lei, TF; Chao, TS; Peng, CH; Wang, HC |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Real-time process control to prevent CD variation induced by post exposure delay
|
Ku, CY; Lei, TF; Shieh, JM; Chiou, TB; Chen, YC |
| 國立交通大學 |
2014-12-08T15:27:01Z |
New overlay pattern design for real-time focus and tilt monitor
|
Ku, CY; Lei, TF; Shieh, JM; Chiou, TB; Lin, HK |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Effects of plasma treatments on the characteristics of poly-Si thin-film transistors having electrical junctions induced by a bottom sub-gate
|
Yu, CM; Lin, HC; Lei, TF; Huang, TY |
| 國立交通大學 |
2014-12-08T15:25:50Z |
Characteristics improvement and carrier transportation of CeO2 gate dielectrics with rapid thermal annealing
|
Wang, JC; Chiang, KC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:25:43Z |
High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicate
|
Lin, YH; Chien, CH; Lin, CT; Chen, CW; Chang, CY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Investigation of localized breakdown spots in thin SiO(2) using scanning capacitance microscopy
|
Wang, SD; Chang, MN; Chen, CY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Mechanism of on-current and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors
|
De Wang, S; Chang, TY; Lo, WH; Lei, TF |
| 國立交通大學 |
2014-12-08T15:25:12Z |
2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate
|
Lin, YH; Chien, CH; Chou, TH; Chao, TS; Chang, CY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:19:40Z |
Resist nano-modification technology for enhancing the lithography and etching performance
|
You, HC; Ko, FH; Lei, TF |
| 國立交通大學 |
2014-12-08T15:19:37Z |
High-perfomance nonvolatile HfO2 nanocrystal memory
|
Lin, YH; Chien, CH; Lin, CT; Chang, CY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:19:37Z |
Novel program versus disturb window characterization for split-gate flash cell
|
Sung, HC; Lei, TF; Hsu, TH; Kao, YC; Lin, YT; Wang, CS |
| 國立交通大學 |
2014-12-08T15:19:03Z |
A novel process-compatible fluorination technique with electrical characteristic improvements of poly-Si TFTs
|
Wang, SD; Lo, WH; Chang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:18:51Z |
Performance and reliability of poly-Si TFTs on FSG buffer layer
|
De Wang, S; Chang, TY; Chien, CH; Lo, WH; Sang, JY; Lee, JW; Lei, TF |
| 國立交通大學 |
2014-12-08T15:18:45Z |
Soft breakdown of hafnium oxynitride gate dielectrics
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Wang, JC; Shie, DC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:18:42Z |
Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation
|
Shieh, MS; Lin, YJ; Yu, CM; Lei, TF |
| 國立交通大學 |
2014-12-08T15:18:30Z |
Drain/gate-voltage-dependent on-current and off-current instabilities in polycrystalline silicon thin-film transistors under electrical stress
|
Wang, SD; Chang, TY; Lo, WH; Sang, JY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:18:21Z |
A novel dynamic threshold voltage MOSFET (DTMOS) using heterostructure channel of Si1-yCy interlayer
|
Shieh, MS; Chen, PS; Tsai, MJ; Lei, TF |
| 國立交通大學 |
2014-12-08T15:18:20Z |
Novel single-poly EEPROM with damascene control-gate structure
|
Sung, HC; Lei, TF; Hsu, TH; Wang, SW; Kao, YC; Lin, YT; Wang, CS |
| 國立交通大學 |
2014-12-08T15:18:15Z |
New triple self-aligned (SA3) split-gate flash cell with T-shaped source coupling
|
Sung, HC; Lei, TF; Huang, CM; Kao, YC; Lin, YT; Wang, CS |
| 國立交通大學 |
2014-12-08T15:18:03Z |
Pentacene-based thin film transistors used to drive a twist-nematic liquid crystal display
|
Wang, YW; Cheng, HL; Wang, YK; Hu, TH; Ho, JC; Lee, CC; Lei, TF; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:17:43Z |
The CMP process and cleaning solution for planarization of strain-relaxed SiGe virtual substrates in MOSFET applications
|
Shieh, MS; Chen, PS; Tsai, MJ; Lei, TF |
| 國立交通大學 |
2014-12-08T15:17:42Z |
Physical characterization and electrical properties of sol-gel-derived zirconia films
|
You, HC; Fu-Hsiang, K; Lei, TF |
| 國立交通大學 |
2014-12-08T15:17:02Z |
High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure
|
Kuo, PY; Chao, TS; Wang, RJ; Lei, TF |
| 國立交通大學 |
2014-12-08T15:17:01Z |
Mismatches after hot-carrier injection in advanced complementary metal-oxide-semiconductor technology particularly for analog applications
|
Chen, SY; Lin, JC; Chen, HW; Lin, HC; Jhou, ZW; Chou, S; Ko, J; Lei, TF; Haung, HS |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Electrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistors
|
Shieh, MS; Sang, JY; Chen, CY; Wang, SD; Lei, TF |
| 國立交通大學 |
2014-12-08T15:16:56Z |
Investigation of DC hot-carrier degradation at elevated temperatures for n-channel metal-oxide-semiconductor field-effect-transistor of 0.13 mu m technology
|
Lin, JC; Chen, SY; Chen, HW; Jhou, ZW; Lin, HC; Chou, S; Ko, J; Lei, TF; Haung, HS |
| 國立交通大學 |
2014-12-08T15:16:53Z |
Novel two-bit HfO2 nanocrystal nonvolatile flash memory
|
Lin, YH; Chien, CH; Lin, CT; Chang, CY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:16:51Z |
Fullerene-incorporation for enhancing the electron beam resist performance for contact hole patterning and filling
|
You, HC; Ko, FH; Lei, TF |
| 國立交通大學 |
2014-12-08T15:16:41Z |
Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory
|
Lin, YH; Chien, CH; Chang, CY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:06:32Z |
SPECIFIC CONTACT RESISTANCE OF NI-AU-GE-NGAP SYSTEM
|
LEI, TF; LEE, CL; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:06:32Z |
TI-TIO2 GATED MOS DIODE LIGHT SENSOR
|
CHANG, CY; KAO, CW; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:31Z |
METAL-N-GAP SCHOTTKY-BARRIER HEIGHTS
|
LEI, TF; LEE, CL; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:06:26Z |
DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURE
|
JEN, CW; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:15Z |
A SIMPLE METHOD FOR SINGLE-FREQUENCY OPERATION AND AMPLITUDE-STABILIZATION AND FREQUENCY-STABILIZATION OF AN INTERNAL-MIRROR HE-NE-LASER
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PAN, CL; KUO, CC; HSIEH, TC; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:14Z |
SENSITIVITY OF FREQUENCY STABILITY OF 2-MODE INTERNAL-MIRROR HE-NE LASERS TO MISALIGNMENT OF POLARIZING OPTICS
|
PAN, CL; JEAN, PY; KUO, CC; HSIEH, TC; LEI, TF |
Showing items 66-115 of 214 (5 Page(s) Totally)
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