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Showing items 71-80 of 214  (22 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:39:26Z Efficient improvement of hot-carrier-induced device's degradation for sub-0.1 mu m complementary metal-oxide-semiconductor field-effect-transistor technology Lin, JC; Yeh, WK; Lei, TF
國立交通大學 2014-12-08T15:39:00Z Fabrication of sub-60-nm contact holes in silicon dioxide layers Ko, FH; You, HC; Chu, TC; Lei, TF; Hsu, CC; Chen, HL
國立交通大學 2014-12-08T15:38:47Z Novel one-step aqueous solutions to replace pregate oxide cleans Pan, TM; Lei, TF; Ko, FH; Chao, TS; Chin, TH; Lu, CP
國立交通大學 2014-12-08T15:38:37Z Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure Kuo, PY; Chao, TS; Lei, TF
國立交通大學 2014-12-08T15:37:17Z Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors Wang, YW; Cheng, HL; Wang, YK; Hu, TH; Ho, JC; Lee, CC; Lei, TF; Yeh, CF
國立交通大學 2014-12-08T15:37:03Z CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs Wang, SD; Lo, WH; Lei, TF
國立交通大學 2014-12-08T15:37:01Z Improvement of junction leakage by using a Zr cap layer on a 30 nm ultrashallow nickel-silicide junction Lee, TL; Lee, MZ; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:36:04Z Observation of localized breakdown spots in thin SiO2 films using scanning capacitance microscopy Wang, SD; Chang, MN; Chen, CY; Lei, TF
國立交通大學 2014-12-08T15:27:51Z IMPROVED ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS YANG, CK; LEI, TF; LEE, CL
國立交通大學 2014-12-08T15:27:34Z Low temperature (850 degrees C) two-step N2O annealed thin gate oxides Lai, CS; Lee, CL; Lei, TF; Chao, TS; Peng, CH; Wang, HC

Showing items 71-80 of 214  (22 Page(s) Totally)
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