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| 臺大學術典藏 |
2022-08-09T03:50:33Z |
Effects of interfacial layers in InGaNGaN quantum-well structures on their optical and nanostructural properties
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Cheng Y.-C.; Wu C.-M.; Yang C.C.; Li G.A.; Rosenauer A.; Ma K.-J.; Shi S.-C.; Chen L.C.; Cheng Y.-C.; Wu C.-M.; Yang C.C.; Li G.A.; Rosenauer A.; Ma K.-J.; Shi S.-C.; Chen L.C.; LI-CHYONG CHEN |
| 臺大學術典藏 |
2018-09-10T04:49:37Z |
Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
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Cheng, Y.-C.;Wu, C.-M.;Chen, M.-K.;Yang, C.C.;Feng, Z.-C.;Li, G.A.;Yang, J.-R.;Rosenauer, A.;Ma, K.-J.; Cheng, Y.-C.; Wu, C.-M.; Chen, M.-K.; Yang, C.C.; Feng, Z.-C.; Li, G.A.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; CHIH-CHUNG YANG |
| 國立臺灣科技大學 |
2016 |
Phosphorus-Rich Copper Phosphide Nanowires for Field-Effect Transistors and Lithium-Ion Batteries
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Li, G.-A;Wang, C.-Y;Chang, W.-C;Tuan, H.-Y. |
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