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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2015-07-21T08:28:22Z |
Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique
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Chiu, Ching-Hsueh; Lin, Chien-Chung; Tu, Po-Min; Huang, Shih-Cheng; Tu, Chia-Cheng; Li, Jin-Chai; Li, Zhen-Yu; Uen, Wu-Yih; Zan, Hsiao-Wen; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:31:51Z |
Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions
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Lin, Da-Wei; Wang, Chao-Hsun; Chang, Shih-Pang; Chiu, Ching-Hsueh; Lan, Yu-Pin; Li, Zhen-Yu; Li, Jin-Chai; Lu, Tien-Chang; Wang, Shing-Chung; Kuo, Hao-Chung |
| 國立交通大學 |
2014-12-08T15:31:24Z |
Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
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Chiu, Ching-Hsueh; Lin, Chien-Chung; Deng, Dong-Mei; Lin, Da-Wei; Li, Jin-Chai; Li, Zhen-Yu; Shu, Gia-Wei; Lu, Tien-Chang; Shen, Ji-Lin; Kuo, Hao-Chung; Lau, Kei-May |
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