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"li k s"的相關文件
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| 國立成功大學 |
2023 |
Demonstration of Mos2 Memtransistor with Poly-Si Source/Drain Featuring Tunable Conductance States and Boosted ION
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Li, K.S.;Huang, M.K.;Wang, Y.H.;Tseng, Y.C.;Su, C.J. |
| 臺大學術典藏 |
2022-04-25T06:41:31Z |
Thermally Robust Perpendicular SOT-MTJ Memory Cells with STT-Assisted Field-Free Switching
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Tsou Y.-J;Chen W.-J;Shih H.-C;Liu P.-C;Liu C.W;Li K.-S;Shieh J.-M;Yen Y.-S;Lai C.-H;Wei J.-H;Tang D.D;Sun J.Y.-C.; Tsou Y.-J; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:04:06Z |
High-Frequency Graphene Base Hot-Electron Transistor
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Liang B.-W;Chang W.-H;Lin H.-Y;Chen P.-C;Zhang Y.-T;Simbulan K.B;Li K.-S;Chen J.-H;Kuan C.-H;Lan Y.-W.; Liang B.-W; Chang W.-H; Lin H.-Y; Chen P.-C; Zhang Y.-T; Simbulan K.B; Li K.-S; Chen J.-H; Kuan C.-H; Lan Y.-W.; CHIEH-HSIUNG KUAN |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
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Lee M.H;Chen P.-G;Fan S.-T;Kuo C.-Y;Chen H.-H;Gu S.-S;Chou Y.-C;Tang C.-H;Hong R.-C;Wang Z.-Y;Liao M.-H;Li K.-S;Chen M.-C;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Ferroelectric Al:HfO2 negative capacitance FETs
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Lee M.H;Chen P.-G;Fan S.-T;Chou Y.-C;Kuo C.-Y;Tang C.-H;Chen H.-H;Gu S.-S;Hong R.-C;Wang Z.-Y;Chen S.-Y;Liao C.-Y;Chen K.-T;Chang S.T;Liao M.-H;Li K.-S;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs
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Lee M.H;Lin Y.-Y;Yang Y.-J;Hsieh F.-C;Chang S.T;Liao M.-H;Li K.-S;Liu C.W;Chen K.-T;Liao C.-Y;Siang G.-Y;Lo C;Chen H.-Y;Tseng Y.-J;Chueh C.-Y;Chang C.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-08-05T02:37:33Z |
Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
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Lee M.H;Chen P.-G;Fan S.-T;Kuo C.-Y;Chen H.-H;Gu S.-S;Chou Y.-C;Tang C.-H;Hong R.-C;Wang Z.-Y;Liao M.-H;Li K.-S;Chen M.-C;Liu C.W.; Lee M.H; MING-HAN LIAO et al. |
| 臺大學術典藏 |
2021-02-04T02:48:59Z |
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs
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Lee, M.H.; Lin, Y.-Y.; Yang, Y.-J.; Hsieh, F.-C.; Chang, S.T.; Liao, M.-H.; Li, K.-S.; Liu, C.W.; Chen, K.-T.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Chen, H.-Y.; Tseng, Y.-J.; Chueh, C.-Y.; Chang, C.; MING-HAN LIAO; Lee, M.H. et al. |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications
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Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:32Z |
Ferroelectric HfZrO2 FETs for steep switch onset
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Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO |
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