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Showing items 11-35 of 37 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:03Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
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Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:51Z |
Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes
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Lin, CY; Chin, A; Hou, YT; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:32Z |
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates
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Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
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Zhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:11Z |
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
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Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N |
| 國立交通大學 |
2014-12-08T15:39:00Z |
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
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Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:45Z |
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
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Zhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:36Z |
A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
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Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N; Li, MF; Chin, A; Sin, JKO; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:31Z |
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
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Low, T; Li, MF; Shen, C; Yeo, YC; Hou, YT; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:27Z |
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
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Zhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:26Z |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
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Yu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:37:19Z |
Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
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Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Li, MF; Balasubramanian, N; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:34:48Z |
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate
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Zhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:34:46Z |
Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices
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Yu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:26:18Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
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Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
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Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:09Z |
High density RF MIM capacitors using high-kappa AlTaOx dielectrics
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Huang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:09Z |
Microwave coplanar filters on Si substrates
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Chan, KT; Chin, A; Kuo, JT; Chang, CY; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:55Z |
High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology
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Chin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:47Z |
A tunable and program-erasable capacitor on Si with excellent tuning memory
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Lai, CH; Lee, CF; Chin, A; Zhu, C; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:43Z |
3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS
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Yu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:27Z |
Strain-induced very low noise RF MOSFETs on flexible plastic substrate
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Kao, HL; Chin, A; Hung, BF; Lai, JM; Lee, CF; Li, MF; Samudra, GS; Zhu, C; Xia, ZL; Liu, XY; Kang, JF |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
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Yu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:19:37Z |
A novel program-erasable high-(K) A1N-Si MIS capacitor
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Lai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:18:59Z |
The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs
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Yu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP |
Showing items 11-35 of 37 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
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