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Showing items 31-37 of 37 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:25:43Z |
3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS
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Yu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:27Z |
Strain-induced very low noise RF MOSFETs on flexible plastic substrate
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Kao, HL; Chin, A; Hung, BF; Lai, JM; Lee, CF; Li, MF; Samudra, GS; Zhu, C; Xia, ZL; Liu, XY; Kang, JF |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
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Yu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:19:37Z |
A novel program-erasable high-(K) A1N-Si MIS capacitor
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Lai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:18:59Z |
The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs
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Yu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:17:29Z |
High work function IrxSi gates on HfAlON p-MOSFETs
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Wu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP |
| 國立臺灣大學 |
2003-05 |
The influence of bolus volume, temperature, and viscosity to swallowing function evaluated by a self-designed phagometer: A preliminary study.
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Li, CM; Li, MF; Kuo, PL; Wang, TG; Lien, IN. |
Showing items 31-37 of 37 (1 Page(s) Totally)
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