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机构 日期 题名 作者
國立交通大學 2019-09-02T07:46:17Z Tunable Ge content and thickness in hemispherical-shell shaped SiGe recess channels created by proximal Ge nanospheres Chen, C. T.; Peng, K. P.; George, T.; Lin, H. C.; Li, Pei-Wen
國立交通大學 2019-06-03T01:08:38Z Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation Wu, Ming-Hung; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-05-02T00:25:51Z Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method Wu, Ming-Hung; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-04-03T06:42:03Z Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation Kuo, Ming-Hao; Hong, Po-Yu; Liu, Ping-Che; Lee, Meng-Chun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen
國立交通大學 2019-04-03T06:38:34Z A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step Lai, Wei-Ting; Yang, Kuo-Ching; Hsu, Ting-Chia; Liao, Po-Hsiang; George, Thomas; Li, Pei-Wen
國立交通大學 2019-04-03T06:36:44Z Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen
國立交通大學 2019-04-03T06:35:32Z High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects Kuo, Ming-Hao; Lee, Meng-Chun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen
國立交通大學 2019-04-02T06:04:27Z Back to the Future: Germanium nanoengineering reemerges as the savior of Si functional devices Li, Pei-Wen
國立交通大學 2019-04-02T06:04:21Z Study of the Long-Term Electrical Stability of InGaZnO 3-D Film-Profile-Engineered Inverters Kuan, Chin-I; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-04-02T06:04:21Z ZnON Contacts Enabling High-performance 3-D InGaZnO Inverters Kuan, Chin-I; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen

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