English  |  正體中文  |  简体中文  |  總筆數 :0  
造訪人次 :  52519956    線上人數 :  1124
教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
關於TAIR

瀏覽

消息

著作權

相關連結

"li pei wen"的相關文件

回到依作者瀏覽
依題名排序 依日期排序

顯示項目 1-25 / 52 (共3頁)
1 2 3 > >>
每頁顯示[10|25|50]項目

機構 日期 題名 作者
國立成功大學 2025-01-17 5 GHz 電流再利用架構及 3.5 GHz 雜訊抵消架構之超低溫低雜訊放大器設計 李珮玟; Li, Pei-Wen
朝陽科技大學 2024-08-31 臺灣農藥規範對有機農產品殘留風險之影響-以中部某驗證機構為例 李培聞; LI, PEI-WEN
國立交通大學 2020-10-05T02:01:27Z Self-organized Pairs of Ge Double Quantum Dots with Tunable Sizes and Spacings Enable Room-Temperature Operation of Qubit and Single-Electron Devices Peng, Kang-Ping; Chen, Ching-Lun; Tang, Ying-Tsan; Kuo, David; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2020-10-05T01:59:51Z Coordinated and Simultaneous Formation of Paired Ge Quantum Dots by Thermal Oxidation of Designer Poly-SiGe Spacer Structures Chen, Han-Yu; Peng, Kang-Ping; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2020-07-01T05:22:11Z Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor Change, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen; Lin, Horng-Chih
國立交通大學 2020-07-01T05:21:20Z Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime Kuo, Yu-Hong; Chiu, Shih-Hsuan; Tien, Che-Wei; Lin, Sheng-Di; Chang, Wen-Hao; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2020-05-05T00:02:22Z Study on random telegraph noise of high-idmetal-gate gate-all-around poly-Si nanowire transistors Lin, Horng-Chih; Chang, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen
國立交通大學 2020-05-05T00:02:22Z A novel photoresist-based film-profile engineering scheme for fabricating double-gated, recess-channel IGZO thin-film transistors Lin, Horng-Chih; Su, Chun-Jung; Li, Pei-Wen; Meng, Yu-Chiao; Huang, Yu-An; Peng, Kang-Pin
國立交通大學 2020-02-02T23:55:35Z Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots Shmid, Volodymyr; Kuryliuk, Vasyl; Nadtochiy, Andriy; Korotchenkov, Oleg; Li, Pei-Wen
國立交通大學 2020-01-02T00:03:29Z Feasibility of Ge double quantum dots with high symmetry and tunability in size and inter-dot spacing Peng, Kang-Ping; Huang, Tsung-Lin; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2020-01-02T00:03:29Z Structual Design of T-gate, Air-spacer Poly-Si TFTs for RF applications Huang, Yu-An; Yeh, Yu-Hsiang; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2020-01-02T00:03:27Z Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor Chang, You-Tai; Li, Pei-Wen; Lin, Horng-Chih
國立交通大學 2019-12-13T01:12:23Z Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features Nadtochiy, Andriy; Kuryliuk, Vasyl; Strelchuk, Viktor; Korotchenkov, Oleg; Li, Pei-Wen; Lee, Sheng-Wei
國立交通大學 2019-09-02T07:46:20Z Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications Peng, Kang-Ping; Huang, Tsung Lin; George, Tom; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-09-02T07:46:20Z Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe Huang, Tsung-Lin; Peng, Kang-Ping; Chen, Ching-Lun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen
國立交通大學 2019-09-02T07:46:17Z Tunable Ge content and thickness in hemispherical-shell shaped SiGe recess channels created by proximal Ge nanospheres Chen, C. T.; Peng, K. P.; George, T.; Lin, H. C.; Li, Pei-Wen
國立交通大學 2019-06-03T01:08:38Z Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation Wu, Ming-Hung; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-05-02T00:25:51Z Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method Wu, Ming-Hung; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-04-03T06:42:03Z Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation Kuo, Ming-Hao; Hong, Po-Yu; Liu, Ping-Che; Lee, Meng-Chun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen
國立交通大學 2019-04-03T06:38:34Z A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step Lai, Wei-Ting; Yang, Kuo-Ching; Hsu, Ting-Chia; Liao, Po-Hsiang; George, Thomas; Li, Pei-Wen
國立交通大學 2019-04-03T06:36:44Z Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen
國立交通大學 2019-04-03T06:35:32Z High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects Kuo, Ming-Hao; Lee, Meng-Chun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen
國立交通大學 2019-04-02T06:04:27Z Back to the Future: Germanium nanoengineering reemerges as the savior of Si functional devices Li, Pei-Wen
國立交通大學 2019-04-02T06:04:21Z Study of the Long-Term Electrical Stability of InGaZnO 3-D Film-Profile-Engineered Inverters Kuan, Chin-I; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-04-02T06:04:21Z ZnON Contacts Enabling High-performance 3-D InGaZnO Inverters Kuan, Chin-I; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen

顯示項目 1-25 / 52 (共3頁)
1 2 3 > >>
每頁顯示[10|25|50]項目