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Taiwan Academic Institutional Repository >
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"li pei wen"
Showing items 6-30 of 52 (3 Page(s) Totally) 1 2 3 > >> View [10|25|50] records per page
| 國立交通大學 |
2020-07-01T05:21:20Z |
Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime
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Kuo, Yu-Hong; Chiu, Shih-Hsuan; Tien, Che-Wei; Lin, Sheng-Di; Chang, Wen-Hao; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-05-05T00:02:22Z |
Study on random telegraph noise of high-idmetal-gate gate-all-around poly-Si nanowire transistors
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Lin, Horng-Chih; Chang, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen |
| 國立交通大學 |
2020-05-05T00:02:22Z |
A novel photoresist-based film-profile engineering scheme for fabricating double-gated, recess-channel IGZO thin-film transistors
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Lin, Horng-Chih; Su, Chun-Jung; Li, Pei-Wen; Meng, Yu-Chiao; Huang, Yu-An; Peng, Kang-Pin |
| 國立交通大學 |
2020-02-02T23:55:35Z |
Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots
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Shmid, Volodymyr; Kuryliuk, Vasyl; Nadtochiy, Andriy; Korotchenkov, Oleg; Li, Pei-Wen |
| 國立交通大學 |
2020-01-02T00:03:29Z |
Feasibility of Ge double quantum dots with high symmetry and tunability in size and inter-dot spacing
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Peng, Kang-Ping; Huang, Tsung-Lin; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-01-02T00:03:29Z |
Structual Design of T-gate, Air-spacer Poly-Si TFTs for RF applications
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Huang, Yu-An; Yeh, Yu-Hsiang; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-01-02T00:03:27Z |
Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor
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Chang, You-Tai; Li, Pei-Wen; Lin, Horng-Chih |
| 國立交通大學 |
2019-12-13T01:12:23Z |
Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features
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Nadtochiy, Andriy; Kuryliuk, Vasyl; Strelchuk, Viktor; Korotchenkov, Oleg; Li, Pei-Wen; Lee, Sheng-Wei |
| 國立交通大學 |
2019-09-02T07:46:20Z |
Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications
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Peng, Kang-Ping; Huang, Tsung Lin; George, Tom; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-09-02T07:46:20Z |
Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
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Huang, Tsung-Lin; Peng, Kang-Ping; Chen, Ching-Lun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen |
| 國立交通大學 |
2019-09-02T07:46:17Z |
Tunable Ge content and thickness in hemispherical-shell shaped SiGe recess channels created by proximal Ge nanospheres
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Chen, C. T.; Peng, K. P.; George, T.; Lin, H. C.; Li, Pei-Wen |
| 國立交通大學 |
2019-06-03T01:08:38Z |
Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation
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Wu, Ming-Hung; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-05-02T00:25:51Z |
Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method
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Wu, Ming-Hung; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-04-03T06:42:03Z |
Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation
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Kuo, Ming-Hao; Hong, Po-Yu; Liu, Ping-Che; Lee, Meng-Chun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen |
| 國立交通大學 |
2019-04-03T06:38:34Z |
A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step
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Lai, Wei-Ting; Yang, Kuo-Ching; Hsu, Ting-Chia; Liao, Po-Hsiang; George, Thomas; Li, Pei-Wen |
| 國立交通大學 |
2019-04-03T06:36:44Z |
Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors
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Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen |
| 國立交通大學 |
2019-04-03T06:35:32Z |
High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects
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Kuo, Ming-Hao; Lee, Meng-Chun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T06:04:27Z |
Back to the Future: Germanium nanoengineering reemerges as the savior of Si functional devices
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Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T06:04:21Z |
Study of the Long-Term Electrical Stability of InGaZnO 3-D Film-Profile-Engineered Inverters
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Kuan, Chin-I; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T06:04:21Z |
ZnON Contacts Enabling High-performance 3-D InGaZnO Inverters
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Kuan, Chin-I; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T05:58:41Z |
Self-Organized Ge Nanospherical Gate/SiO2/Si0.15Ge0.85-Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
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Liao, Po-Hsiang; Peng, Kang-Ping; Lin, Horng-Chih; George, Thomas; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T05:57:55Z |
The Germanium "Halo": Visualizing Ge interstitial dynamics in nanocrystallite formation
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George, Thomas; Huang, Tsung-Lin; Hsueh, Chui-Yu; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2018-08-21T05:57:01Z |
Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices
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Hsueh, C. Y.; Huang, T. L.; Peng, K. P.; Kuo, M. H.; Lin, H. C.; Li, Pei-Wen |
| 國立交通大學 |
2018-08-21T05:57:01Z |
Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics
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Kuo, Ming-Hao; Liu, B. J.; Huang, T. L.; Lin, H. C.; Li, Pei-Wen |
| 國立交通大學 |
2018-08-21T05:57:00Z |
Study on Random Telegraph Noise of Gate-All-Around Poly-Si Junctionless Nanowire Transistors
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Yang, Chen-Chen; Peng, Kang-Ping; Chen, Yung-Chen; Lin, Horng-Chih; Li, Pei-Wen |
Showing items 6-30 of 52 (3 Page(s) Totally) 1 2 3 > >> View [10|25|50] records per page
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