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Institution	Date	Title	Author
國立臺灣海洋大學	2013-12	Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate	Jung Han; Shih-Wei Feng; Yu-Yu Chen; Chih-Ming Lai; Li-Wei Tu
國立臺灣海洋大學	2013-09	Modeling of InGaN p-n junction solar cells	Li-Wei Tu; Shih-Wei Feng; Chih-Ming Lai; Chin-Yi Tsai; Yu-Ru Su
國立臺灣海洋大學	2011-08	Surface striation, anisotropic in-plane strain, and degree of polarization in nonpolar m-plane GaN grown on SiC	Jung Han; Shih-Wei Feng; Chih-Kai Yang; Chih-Ming Lai; Li-Wei Tu; Qian Sun
國立中山大學	2009	氮化物奈米柱之奈米光電元件研究(台法)	杜立偉;林時彥; Li-Wei Tu ;Shih-Yen Lin
國立中山大學	2009	非/半極性氮化物成長與研究	杜立偉; Li-Wei Tu
國立中山大學	2009	寬能域雙接面異質結構矽晶太陽能電池	杜立偉;陳永松;周明奇;馮世維; Li-Wei Tu;Quark Yung-Sung Chen;Ming-Chi, MitchChou;Shih-Wei Feng
國立臺灣海洋大學	2006-02-14	Local Oxidation of InN and GaN Using an Atomic Force Microscope	Jih Shang Hwang;Zhan Shuo Hu;Zen Yu You;Tai Yuan Lin;Chin Lian Hsiao;Li Wei Tu
國立中山大學	2006	Reply to Comments on “Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures”	Ikai Lo;J.K. Tsai;W.J. Yao;P.C. Ho;Li-Wei Tu;T.C. Chang;S. Elhamri;W.C. Mitchel;K.Y. Hsieh;J.H. Huang;H.L. Huang;W.C. Tsai
國立中山大學	2006	氮化銦之分子束磊晶成長與特性量測	杜立偉; Li-Wei Tu
國立中山大學	2005	氮基三五族半導體奈米結構(II)	杜立偉;劉全璞;蔡民雄;羅奕凱; Li-Wei Tu;Chuan-Pu Liu;Mim-Hsiung Tsai;Ikai Lo
國立中山大學	2004	氮基三五族半導體奈米結構(I)	杜立偉;羅奕凱;蔡民雄;劉全璞; Li-Wei Tu;Ikai Lo;Mim-Hsiung Tsai;Chuan-Pu Liu
國立中山大學	2004	以電漿輔助分子束磊晶成長 III-氮半導體與量測分析( III )	杜立偉; Li-Wei Tu
國立中山大學	2003	Second subband population of two-dimensional electron gas in strongly coupled GaAs/Al0.3Ga0.7As double quantum wells	Ikai Lo;J.K. Tsai;P.C. Ho;W.J. Yao;C.H. Chang;J.C. Chiang;Li-Wei Tu;Q.X. Zhao
國立中山大學	2003	Vertical hexagonal GaN nanorods grown on (111)Si substrate	Ching-Lien Hsiao;Li-Wei Tu;T.W. Chi;Jamafon J. Wu;Kuang-Yu Hsieh;Ikai Lo
國立中山大學	2003	Second subband population of the two-dimensional electron gas in strongly coupled GaAs/Al0.3Ga0.7As double quantum wells	Ikai Lo;J.K. Tsai;P.C. Ho;W.J. Yao;C.H. Chang;Jih-Chen Chiang;Li-Wei Tu;Q.X. Zhao
國立中山大學	2003	以電漿輔助分子束磊晶成長III---氮半導體與量測分析(II)	杜立偉; Li-Wei Tu
國立中山大學	2002	Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures	Ikai Lo;J.K. Tsai;W.J. Yao;P.C. Ho;Li-Wei Tu;T.C. Chang;S. Elhamri;W.C. Mitchel;K.Y. Hsieh;J.H. Huang;H.L. Huang;W.C. Tsai
國立中山大學	2002	Plasma assisted MBE growth and characterizations of GaN	Li-Wei Tu;K.H. Lee;C.M. Lai;M.K. Hsu;W.S. Chen;C.S. Liu;Ikai Lo;J.K. Tsai;P.C. Ho;K.Y. Hsieh;C.H. Huang;Y.L. Shen
國立中山大學	2002	Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures	Ikai Lo;J.K. Tsai;Li-Wei Tu;K.Y. Hsieh;C.S. Liu;J.H. Huang;S. Elhamri;W.C. Mitchel;J.K. Sheu
國立中山大學	2002	Landau-level mixing effect in Ga1-xAlxAs/GaAs/Ga1-xAlxAs double-barrier resonant tunneling structures	Jih-Chen Chiang;I-Min Jiang;Ikai Lo;Li-Wei Tu
國立中山大學	2002	Landau-level mixing effect in Ga1-xAlxAs-GaAs-Ga1-xAlxAs double-barrier Resonant tunneling structures	Jih-Chen Chiang;I-Min Jiang;Ikai Lo;Li-Wei Tu
國立中山大學	2002	Wide bandgap semiconductor materials for device application using in space	Ikai Lo;Li-Wei Tu;J.K. Tsai
國立中山大學	2002	Characteristics of GaN grown by RF-plasma enhanced molecular beam epitaxy	L.M. Lai;K.H. Lee;W.S. Chen;C.S. Liu;Li-Wei Tu;Ikai Lo;C.H. Huang;Y.L. Shen;K.Y. Hsieh
國立中山大學	2002	The electronic properties of modulation-doped AlGaN/GaN heterostructures	J.K. Tsai;W.J. Yao;P.C. Ho;Ikai Lo;Li-Wei Tu;T.C. Chang;W.C. Tsai
國立中山大學	2002	Piezoelectric Effect on Al0.35In0.65N/GaN Heterostructures	J.K. Tasi;Ikai Lo;Li-Wei Tu;K.Y. Hsieh;M.H. Tsai;C.S. Liu;J.H. Huang

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