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| 臺大學術典藏 |
2022-03-22T15:04:56Z |
A 0.6-dB Low Loss and 3-165 GHz Wideband Phase Difference Sub-THz Coupler in 0.18-μm CMOS
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Chang, Yu Hsiang; Hsieh, Cheng Hung; Cheng, Shi Peng; Li, Yiming; Samukawa, Seiji; TZONG-LIN WU; Tsai, Zuo Min |
| 臺大學術典藏 |
2022-02-21T23:30:49Z |
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
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SHU-WEI CHANG; Lu, Tsung Han; Yang, Cong Yi; Yeh, Cheng Jui; Huang, Min Kun; Meng, Ching Fan; Chen, Po Jen; Chang, Ting Hsuan; Chang, Yan Shiuan; Jhu, Jhe Wei; Hong, Tzu Chieh; Ke, Chu Chu; Yu, Xin Ren; Lu, Wen Hsiang; Baig, Mohammed Aftab; Cho, Ta Chun; Sung, Po Jung; Su, Chun Jung; Hsueh, Fu Kuo; Chen, Bo Yuan; Hu, Hsin Hui; Wu, Chien Ting; Lin, Kun Lin; Ma, William Cheng Yu; Lu, Darsen D.; Kao, Kuo Hsing; Lee, Yao Jen; Lin, Cheng Li; Huang, Kun Ping; Chen, Kun Ming; Li, Yiming; Samukawa, Seiji; Chao, Tien Sheng; Huang, Guo Wei; Wu, Wen Fa; Lee, Wen Hsi; JIUN-YUN LI; Shieh, Jia Min; Tarng, Jenn Hwan; Wang, Yeong Her; Yeh, Wen Kuan |
| 國立交通大學 |
2020-10-05T02:02:01Z |
Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
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Shrestha, Niraj Man; Li, Yiming; Chen, Chao-Hsuan; Sanyal, Indraneel; Tarng, Jenn-Hawn; Chyi, Jen-Inn; Samukawa, Seiji |
| 國立交通大學 |
2020-10-05T02:01:10Z |
Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowiren-MOSFETs
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Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2020-10-05T02:01:05Z |
Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowiren-type metal-oxide-semiconductor field-effect transistors
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Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2020-07-01T05:22:05Z |
Numerical Simulation of Thermal Conductivity of SiNW-SiGe0.3 Composite for Thermoelectric Applications
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Lee, Ming-Yi; Li, Yiming; Chuang, Min-Hui; Ohori, Daisuke; Samukawa, Seiji |
| 國立交通大學 |
2020-04-01 |
Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal-oxide-semiconductor field-effect transistors
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Thoti, Narasimhulu; Kola, Sekhar Reddy; Li, Yiming |
| 國立交通大學 |
2020-02-02T23:54:39Z |
Low resistive InGaN film grown by metalorganic chemical vapor deposition
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Shrestha, Niraj Man; Chauhan, Prerna; Wong, Yuen-Yee; Li, Yiming; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2019-10-05T00:08:38Z |
Atomic layer defect-free etching for germanium using HBr neutral beam
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Fujii, Takuya; Ohori, Daisuke; Noda, Shuichi; Tanimoto, Yosuke; Sato, Daisuke; Kurihara, Hideyuki; Mizubayashi, Wataru; Endo, Kazuhiko; Li, Yiming; Lee, Yao-Jen; Ozaki, Takuya; Samukawa, Seiji |
| 國立交通大學 |
2019-08-02T02:18:36Z |
Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits
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Li, Yiming; Chen, Chieh-Yang; Chuang, Min-Hui; Chao, Pei-Jung |
Showing items 1-10 of 310 (31 Page(s) Totally)
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