| 國立交通大學 |
2014-12-08T15:24:27Z |
Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain
|
Li, Yiming; Cheng, Hui-Wen; Hwang, Chi-Hong |
| 國立交通大學 |
2014-12-08T15:24:19Z |
Modeling of Price Effects for the Adoption of LCD TV
|
Tsai, Bi-Huei; Li, Yiming; Lee, Guan-Hua |
| 國立交通大學 |
2014-12-08T15:24:17Z |
Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor
|
Chen, Chun-Nan; Chang, Sheng-Hsiung; Su, Wei-Long; Jen, Jen-Yi; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:05Z |
Parameterized Display Performances Behavioral Modeling and Optimization for TFT-LCD Panel
|
Huang, Hsuan-Ming; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:03Z |
Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:02Z |
Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices
|
Li, Tien-Yeh; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:02Z |
Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete Dopant
|
Lee, Kou-Fu; Hwang, Chih-Hong; Li, Tien-Yeh; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:23:44Z |
Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor Devices
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Chao, Ko-An; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:23:23Z |
Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-splitting Calculations for GaN Wurtzite Materials
|
Chen, Chun-Nan; Chang, Sheng-Hsiung; Su, Wei-Long; Wang, Wan-Tsang; Kao, Hsiu-Fen; Jen, Jen-Yi; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:23:20Z |
Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-kappa/Metal Gate Complementary Metal-Oxide-Semiconductor Device and Inverter Circuit
|
Li, Yiming; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:23:16Z |
Random Work-Function-Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo Simulation
|
Li, Yiming; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:22:45Z |
Visi - A VTK- and QT-Based Open-Source Project for Scientific Data Visualization
|
Li, Yiming; Chen, Cheng-Kai |
| 國立交通大學 |
2014-12-08T15:22:45Z |
Effects of Random Number Generations on Intelligent Semiconductor Device Model Parameter Extraction
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:22:31Z |
Design and Fabrication of Sub-Wavelength Structure on Silicon Nitride for Solar Cells
|
Sahoo, Kartika Chandra; Li, Yiming; Lin, Men-Ku; Chang, Edward Yi; Huang, Jin-Hua |
| 國立交通大學 |
2014-12-08T15:22:31Z |
Effect of Process Variation on 15-nm-Gate Stacked Multichannel Surrounding-Gate Field Effect Transistor
|
Han, Ming-Hung; Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:21:29Z |
k.p WURTZITE HAMILTONIAN AND OPTICAL MATRIX WITH BULK INVERSION ASYMMETRY
|
Chen, Chun-Nan; Su, Wei-Long; Wang, Wan-Tsang; Jen, Jen-Yi; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:21:19Z |
A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-kappa/Metal Gate Device
|
Li, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; Yiu, Chun-Yen; Su, Hsin-Wen |
| 國立交通大學 |
2014-12-08T15:20:33Z |
A Unified Parameterization Technique for TFT-LCD Panel Design Optimization
|
Huang, Hsuan-Ming; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:20:12Z |
Random Work Function Variation Induced Threshold Voltage Fluctuation in 16-nm Bulk FinFET Devices with High-kappa-Metal-Gate Material
|
Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:20:04Z |
Simulation of Raman Enhancement in SERS-Active Substrates with Au Layer Considering Different Geometry of Nanoparticles
|
Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:20:00Z |
Cluster evolution of IC industry from Taiwan to China
|
Tsai, Bi-Huei; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:19:49Z |
Modelling competition in global LCD TV industry
|
Tsai, Bi-Huei; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:18:51Z |
Large-Scale Atomistic Circuit-Device Coupled Simulation of Discrete-Dopant-Induced Characteristic Fluctuation in Nano-CMOS Digital Circuits
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:18:51Z |
A Dynamic Competition Simulation for Worldwide Big-size TV Market Using Lotka-Volterra Model
|
Chen, Wu-Tung Terry; Li, Yiming; Hung, Chih-Young |
| 國立交通大學 |
2014-12-08T15:18:45Z |
2008 International Symposium on Computational Management and Social Science
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:18:44Z |
Optimal Doping Profile of MOSFETs Using Geometric Programming
|
Chen, Ying-Chieh; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:18:43Z |
Computational Statistics Approach to Capacitance Sensitivity Analysis and Gate Delay Time Minimization of TFT-LCDs
|
Li, Yiming; Huang, Hsuan-Ming |
| 國立交通大學 |
2014-12-08T15:18:40Z |
Computational Electronics - Physical Modeling, Mathematical Theory, and Numerical Algorithm
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:48Z |
Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:39Z |
Lattice properties of two-dimensional charge-stabilized colloidal crystals
|
Dyshlovenko, Pavel; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:31Z |
A simulation-based evolutionary approach to LNA circuit design optimization
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:28Z |
Intelligent optical proximity correction using genetic algorithm with model- and rule-based approaches
|
Li, Yiming; Yu, Shao-Ming; Li, Yih-Lang |
| 國立交通大學 |
2014-12-08T15:17:26Z |
Hybrid intelligent approach for modeling and optimization of semiconductor devices and nanostructures
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:22Z |
Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices
|
Li, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:17:07Z |
Discrete dopant fluctuated 20nm/15nm-gate planar CMOS
|
Yang, Fu-Liang; Hwang, Jiunn-Ren; Chen, Hung-Ming; Shen, Jeng-Jung; Yu, Shao-Ming; Li, Yiming; Tang, Denny D. |
| 國立交通大學 |
2014-12-08T15:15:51Z |
Comparison of random-dopant-induced threshold voltage fluctuation in nanoscale single-, double-, and surrounding-gate field-effect transistors
|
Li, Yiming; Yu, Shao-Ming |
| 國立交通大學 |
2014-12-08T15:15:13Z |
Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices
|
Li, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming; Yeh, Ta-Ching |
| 國立交通大學 |
2014-12-08T15:14:47Z |
A floating gate design for electrostatic discharge protection circuits
|
Chou, Hung-Mu; Lee, Jam-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:14:30Z |
An efficient near-ML algorithm with SQRD for wireless MIMO communications in metro transportation systems
|
Pan, Chien-Hung; Lee, Ta-Sung; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:14:15Z |
Optimization on configuration of surface conduction electron-emitters
|
Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:13:32Z |
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit
|
Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:31Z |
Effect of Process Variation on Field Emission Characteristic in Surface Conduction Electron-Emitters
|
Lo, Hsiang-Yu; Li, Yiming; Chao, Hsueh-Yung; Tsai, Chih-Hao; Pan, Fu-Ming |
| 國立交通大學 |
2014-12-08T15:13:30Z |
Discrete Dopant Induced Electrical and Thermal Fluctuation in Nanoscale SOI FinFET
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming |
| 國立交通大學 |
2014-12-08T15:13:29Z |
Effect of Single Grain Boundary Position on Surrounding-Gate Polysilicon Thin Film Transistors
|
Li, Yiming; Huang, Jung Y.; Lee, Bo-Shian; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:15Z |
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell
|
Lee, Kuo-Fu; Li, Yiming; Li, Tien-Yen; Su, Zhong-Cheng; Hwang, Chin-Hong |
| 國立交通大學 |
2014-12-08T15:13:15Z |
Discrete-dopant-induced characteristic fluctuations in 16 nm multiple-gate silicon-on-insulator devices
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:07Z |
Statistical variability in FinFET devices with intrinsic parameter fluctuations
|
Hwang, Chih-Hong; Li, Yiming; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:13:05Z |
Field-emission properties of novel palladium nanogaps for surface conduction electron-emitters
|
Lo, Hsiang-Yu; Li, Yiming; Chao, Hsueh-Yung; Tsai, Chih-Hao; Pan, Fu-Ming |
| 國立交通大學 |
2014-12-08T15:13:04Z |
Numerical simulation of field emission in the surface conduction electron-emitter display
|
Lo, Hsiang-Yu; Li, Yiming; Chao, Hsueh-Yung; Tsai, Chih-Hao; Pan, Fu-Ming; Chiang, Mei-Chao; Kuo, Ting-Chen; Mo, Chi-Neng |
| 國立交通大學 |
2014-12-08T15:13:01Z |
Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs
|
Li, Yiming; Hwang, Chih-Hong |
