| 國立交通大學 |
2014-12-08T15:20:00Z |
Cluster evolution of IC industry from Taiwan to China
|
Tsai, Bi-Huei; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:19:49Z |
Modelling competition in global LCD TV industry
|
Tsai, Bi-Huei; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:18:51Z |
Large-Scale Atomistic Circuit-Device Coupled Simulation of Discrete-Dopant-Induced Characteristic Fluctuation in Nano-CMOS Digital Circuits
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:18:51Z |
A Dynamic Competition Simulation for Worldwide Big-size TV Market Using Lotka-Volterra Model
|
Chen, Wu-Tung Terry; Li, Yiming; Hung, Chih-Young |
| 國立交通大學 |
2014-12-08T15:18:45Z |
2008 International Symposium on Computational Management and Social Science
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:18:44Z |
Optimal Doping Profile of MOSFETs Using Geometric Programming
|
Chen, Ying-Chieh; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:18:43Z |
Computational Statistics Approach to Capacitance Sensitivity Analysis and Gate Delay Time Minimization of TFT-LCDs
|
Li, Yiming; Huang, Hsuan-Ming |
| 國立交通大學 |
2014-12-08T15:18:40Z |
Computational Electronics - Physical Modeling, Mathematical Theory, and Numerical Algorithm
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:48Z |
Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:39Z |
Lattice properties of two-dimensional charge-stabilized colloidal crystals
|
Dyshlovenko, Pavel; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:31Z |
A simulation-based evolutionary approach to LNA circuit design optimization
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:28Z |
Intelligent optical proximity correction using genetic algorithm with model- and rule-based approaches
|
Li, Yiming; Yu, Shao-Ming; Li, Yih-Lang |
| 國立交通大學 |
2014-12-08T15:17:26Z |
Hybrid intelligent approach for modeling and optimization of semiconductor devices and nanostructures
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:17:22Z |
Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices
|
Li, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:17:07Z |
Discrete dopant fluctuated 20nm/15nm-gate planar CMOS
|
Yang, Fu-Liang; Hwang, Jiunn-Ren; Chen, Hung-Ming; Shen, Jeng-Jung; Yu, Shao-Ming; Li, Yiming; Tang, Denny D. |
| 國立交通大學 |
2014-12-08T15:15:51Z |
Comparison of random-dopant-induced threshold voltage fluctuation in nanoscale single-, double-, and surrounding-gate field-effect transistors
|
Li, Yiming; Yu, Shao-Ming |
| 國立交通大學 |
2014-12-08T15:15:13Z |
Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices
|
Li, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming; Yeh, Ta-Ching |
| 國立交通大學 |
2014-12-08T15:14:47Z |
A floating gate design for electrostatic discharge protection circuits
|
Chou, Hung-Mu; Lee, Jam-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:14:30Z |
An efficient near-ML algorithm with SQRD for wireless MIMO communications in metro transportation systems
|
Pan, Chien-Hung; Lee, Ta-Sung; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:14:15Z |
Optimization on configuration of surface conduction electron-emitters
|
Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:13:32Z |
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit
|
Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:31Z |
Effect of Process Variation on Field Emission Characteristic in Surface Conduction Electron-Emitters
|
Lo, Hsiang-Yu; Li, Yiming; Chao, Hsueh-Yung; Tsai, Chih-Hao; Pan, Fu-Ming |
| 國立交通大學 |
2014-12-08T15:13:30Z |
Discrete Dopant Induced Electrical and Thermal Fluctuation in Nanoscale SOI FinFET
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming |
| 國立交通大學 |
2014-12-08T15:13:29Z |
Effect of Single Grain Boundary Position on Surrounding-Gate Polysilicon Thin Film Transistors
|
Li, Yiming; Huang, Jung Y.; Lee, Bo-Shian; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:15Z |
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell
|
Lee, Kuo-Fu; Li, Yiming; Li, Tien-Yen; Su, Zhong-Cheng; Hwang, Chin-Hong |
