| 國立交通大學 |
2018-08-21T05:56:25Z |
Design and Simulation of Si/SiC Quantum Dot Superlattice Solar Cells with Al2O3 Passivation Layer
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:56:25Z |
Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants inside Source/Drain Extensions
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:54:11Z |
Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells
|
Rahman, Mohammad Maksudur; Tsai, Yi-Chia; Lee, Ming-Yi; Higo, Akio; Li, Yiming; Hoshi, Yusuke; Usami, Noritaka; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:53:55Z |
Miniband formulation in Ge/Si quantum dot array
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:53:40Z |
DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:53:31Z |
Shape Effect of Surface-Enhanced Raman Scattering-Active-Substrate-Based Nanoparticles on Local Electric Field for Biochemical Sensing Application
|
Lee, En-Tzu; Cheng, Hui-Wen; Yang, Jung-Yen; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:53:24Z |
Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:53:17Z |
Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors
|
Mizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Impact of Doping Concentration on Electronic Properties of Transition Metal-Doped Monolayer Molybdenum Disulfide
|
Tsai, Yi-Chia; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:52:52Z |
Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide
|
Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:52:50Z |
Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-01-24T07:40:09Z |
奈米氮化鈦晶粒對全閘極奈米線互補式金氧半場效應電晶體電路功率與延遲特性擾動之研究
|
趙培蓉; 李義明; Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2018-01-24T07:39:37Z |
下世代砷化銦鎵積體電路元件設計與特性模擬之研究
|
黃政皓; 李義明; Huang, Cheng-Hao; Li, Yiming |
| 國立交通大學 |
2018-01-24T07:39:36Z |
多目標演化法暨多準位訊號驅動方式在資通訊和生醫面板顯示器閘級驅動電路設計最佳化之研究
|
洪聖欽; 李義明; Hung, Sheng-Chin; Li, Yiming |
| 國立交通大學 |
2018-01-24T07:38:29Z |
高介電材料金屬閘極塊材鰭式場效應電晶體製程參數分析與電特性建模之研究
|
蘇炳熏; 李義明; Su,Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:56:38Z |
Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors
|
Shrestha, Niraj M.; Li, Yiming; Chang, E. Y. |
| 國立交通大學 |
2017-04-21T06:56:23Z |
Exploration of Inter-Die Bulk Fin-Typed Field Effect Transistor Process Variation for Reduction of Device Variability
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:56:23Z |
A Systematic Approach to Correlation Analysis of In-Line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:56:22Z |
Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells
|
Rahman, Mohammad Maksudur; Lee, Ming-Yi; Tsai, Yi-Chia; Higo, Akio; Sekhar, Halubai; Igarashi, Makoto; Syazwan, Mohd Erman; Hoshi, Yusuke; Sawano, Kentarou; Usami, Noritaka; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:14Z |
Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Rahman, Mohammad Maksudur; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:02Z |
Low Power and High Driving Capability of Amorphous Silicon Gate Driver Circuit
|
Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO2 current blocking layer
|
Shrestha, Niraj Man; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:39Z |
Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:55:35Z |
32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction
|
Hou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Chang, Mao-Nang; Li, Yiming; Hou, Tuo-Hung |
| 國立交通大學 |
2017-04-21T06:55:31Z |
Optimal Geometry Aspect Ratio of Ellipse-Shaped Surrounding-Gate Nanowire Field Effect Transistors
|
Li, Yiming |
