| 臺大學術典藏 |
2022-03-22T15:04:56Z |
A 0.6-dB Low Loss and 3-165 GHz Wideband Phase Difference Sub-THz Coupler in 0.18-μm CMOS
|
Chang, Yu Hsiang; Hsieh, Cheng Hung; Cheng, Shi Peng; Li, Yiming; Samukawa, Seiji; TZONG-LIN WU; Tsai, Zuo Min |
| 臺大學術典藏 |
2022-02-21T23:30:49Z |
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
|
SHU-WEI CHANG; Lu, Tsung Han; Yang, Cong Yi; Yeh, Cheng Jui; Huang, Min Kun; Meng, Ching Fan; Chen, Po Jen; Chang, Ting Hsuan; Chang, Yan Shiuan; Jhu, Jhe Wei; Hong, Tzu Chieh; Ke, Chu Chu; Yu, Xin Ren; Lu, Wen Hsiang; Baig, Mohammed Aftab; Cho, Ta Chun; Sung, Po Jung; Su, Chun Jung; Hsueh, Fu Kuo; Chen, Bo Yuan; Hu, Hsin Hui; Wu, Chien Ting; Lin, Kun Lin; Ma, William Cheng Yu; Lu, Darsen D.; Kao, Kuo Hsing; Lee, Yao Jen; Lin, Cheng Li; Huang, Kun Ping; Chen, Kun Ming; Li, Yiming; Samukawa, Seiji; Chao, Tien Sheng; Huang, Guo Wei; Wu, Wen Fa; Lee, Wen Hsi; JIUN-YUN LI; Shieh, Jia Min; Tarng, Jenn Hwan; Wang, Yeong Her; Yeh, Wen Kuan |
| 國立交通大學 |
2020-10-05T02:02:01Z |
Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
|
Shrestha, Niraj Man; Li, Yiming; Chen, Chao-Hsuan; Sanyal, Indraneel; Tarng, Jenn-Hawn; Chyi, Jen-Inn; Samukawa, Seiji |
| 國立交通大學 |
2020-10-05T02:01:10Z |
Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowiren-MOSFETs
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2020-10-05T02:01:05Z |
Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowiren-type metal-oxide-semiconductor field-effect transistors
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2020-07-01T05:22:05Z |
Numerical Simulation of Thermal Conductivity of SiNW-SiGe0.3 Composite for Thermoelectric Applications
|
Lee, Ming-Yi; Li, Yiming; Chuang, Min-Hui; Ohori, Daisuke; Samukawa, Seiji |
| 國立交通大學 |
2020-04-01 |
Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal-oxide-semiconductor field-effect transistors
|
Thoti, Narasimhulu; Kola, Sekhar Reddy; Li, Yiming |
| 國立交通大學 |
2020-02-02T23:54:39Z |
Low resistive InGaN film grown by metalorganic chemical vapor deposition
|
Shrestha, Niraj Man; Chauhan, Prerna; Wong, Yuen-Yee; Li, Yiming; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2019-10-05T00:08:38Z |
Atomic layer defect-free etching for germanium using HBr neutral beam
|
Fujii, Takuya; Ohori, Daisuke; Noda, Shuichi; Tanimoto, Yosuke; Sato, Daisuke; Kurihara, Hideyuki; Mizubayashi, Wataru; Endo, Kazuhiko; Li, Yiming; Lee, Yao-Jen; Ozaki, Takuya; Samukawa, Seiji |
| 國立交通大學 |
2019-08-02T02:18:36Z |
Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits
|
Li, Yiming; Chen, Chieh-Yang; Chuang, Min-Hui; Chao, Pei-Jung |
| 國立交通大學 |
2019-05-02T00:25:47Z |
Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure
|
Shrestha, Niraj Man; Li, Yiming; Suemitsu, Tetsuya; Samukawa, Seiji |
| 國立交通大學 |
2019-04-03T06:45:06Z |
Tuning of the electron g factor in defect-free GaAs nanodisks
|
Yang, Li-Wei; Tsai, Yi-Chia; Li, Yiming; Higo, Aiko; Murayama, Akihiro; Samukawa, S.; Voskoboynikov, O. |
| 國立交通大學 |
2019-04-03T06:44:24Z |
Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants
|
Huang, Wen-Tsung; Li, Yiming |
| 國立交通大學 |
2019-04-03T06:38:39Z |
Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1-xGaxAs channel capping layer
|
Huang, Cheng-Hao; Li, Yiming |
| 國立交通大學 |
2019-04-02T06:04:33Z |
Circuit-Simulation-Based Multi-objective Evolutionary Algorithm with Multi-Level Clock Driving Technique for a-Si:H TFTs Gate Driver Circuit Design Optimization
|
Hung, Sheng-Chin; Chen, Chieh-Yang; Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2019-04-02T06:00:31Z |
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
|
Sahoo, Kartika Chandra; Kuo, Chien-I; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:00:30Z |
Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar Cells
|
Sahoo, Kartika Chandra; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:29Z |
Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants
|
Lee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2019-04-02T05:58:39Z |
Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold
|
Tsai, Yi-Chia; Magyari-Kope, Blanka; Li, Yiming; Samukawa, Seiji; Nishi, Yoshio; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:22Z |
Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam
|
Ohori, Daisuke; Fujii, Takuya; Noda, Shuichi; Mizubayashi, Wataru; Endo, Kazuhiko; Lee, En-Tzu; Li, Yiming; Lee, Yao-Jen; Ozaki, Takuya; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:57:14Z |
Work Function Modulation of Monolayer MoS2 Doped with 3d Transition Metals
|
Tsai, Yi-Chia; Chen, Chieh-Yang; Ho, Min-Shao; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:57:08Z |
On Electronic Structure and Geometry of MoX2 (X = S, Se, Te) and Black Phosphorus by ab initio Simulation with Various van der Waals Corrections
|
Tsai, Yi-Chia; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:57:08Z |
Timing and Power Fluctuations on Gate-All-Around Nanowire CMOS Circuit Induced by Various Sources of Random Discrete Dopants
|
Sung, Wen-Li; Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:56:52Z |
Modeling and Simulation of Ge/Si-Nanodisk Array for QD-based IB Solar Cells
|
Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:56:41Z |
Hybrid Genetic Algorithm with Mixed Mutation Mechanism for Optimal Display Panel Circuit Design
|
Lo, I-Hsiu; Li, Yiming; Lee, Kuo-Fu |
| 國立交通大學 |
2018-08-21T05:56:25Z |
Design and Simulation of Si/SiC Quantum Dot Superlattice Solar Cells with Al2O3 Passivation Layer
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:56:25Z |
Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants inside Source/Drain Extensions
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:54:11Z |
Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells
|
Rahman, Mohammad Maksudur; Tsai, Yi-Chia; Lee, Ming-Yi; Higo, Akio; Li, Yiming; Hoshi, Yusuke; Usami, Noritaka; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:53:55Z |
Miniband formulation in Ge/Si quantum dot array
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:53:40Z |
DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:53:31Z |
Shape Effect of Surface-Enhanced Raman Scattering-Active-Substrate-Based Nanoparticles on Local Electric Field for Biochemical Sensing Application
|
Lee, En-Tzu; Cheng, Hui-Wen; Yang, Jung-Yen; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:53:24Z |
Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:53:17Z |
Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors
|
Mizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Impact of Doping Concentration on Electronic Properties of Transition Metal-Doped Monolayer Molybdenum Disulfide
|
Tsai, Yi-Chia; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:52:52Z |
Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide
|
Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-08-21T05:52:50Z |
Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2018-01-24T07:40:09Z |
奈米氮化鈦晶粒對全閘極奈米線互補式金氧半場效應電晶體電路功率與延遲特性擾動之研究
|
趙培蓉; 李義明; Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2018-01-24T07:39:37Z |
下世代砷化銦鎵積體電路元件設計與特性模擬之研究
|
黃政皓; 李義明; Huang, Cheng-Hao; Li, Yiming |
| 國立交通大學 |
2018-01-24T07:39:36Z |
多目標演化法暨多準位訊號驅動方式在資通訊和生醫面板顯示器閘級驅動電路設計最佳化之研究
|
洪聖欽; 李義明; Hung, Sheng-Chin; Li, Yiming |
| 國立交通大學 |
2018-01-24T07:38:29Z |
高介電材料金屬閘極塊材鰭式場效應電晶體製程參數分析與電特性建模之研究
|
蘇炳熏; 李義明; Su,Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:56:38Z |
Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors
|
Shrestha, Niraj M.; Li, Yiming; Chang, E. Y. |
| 國立交通大學 |
2017-04-21T06:56:23Z |
Exploration of Inter-Die Bulk Fin-Typed Field Effect Transistor Process Variation for Reduction of Device Variability
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:56:23Z |
A Systematic Approach to Correlation Analysis of In-Line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:56:22Z |
Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells
|
Rahman, Mohammad Maksudur; Lee, Ming-Yi; Tsai, Yi-Chia; Higo, Akio; Sekhar, Halubai; Igarashi, Makoto; Syazwan, Mohd Erman; Hoshi, Yusuke; Sawano, Kentarou; Usami, Noritaka; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:14Z |
Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Rahman, Mohammad Maksudur; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:02Z |
Low Power and High Driving Capability of Amorphous Silicon Gate Driver Circuit
|
Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO2 current blocking layer
|
Shrestha, Niraj Man; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:39Z |
Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:55:35Z |
32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction
|
Hou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Chang, Mao-Nang; Li, Yiming; Hou, Tuo-Hung |
| 國立交通大學 |
2017-04-21T06:55:31Z |
Optimal Geometry Aspect Ratio of Ellipse-Shaped Surrounding-Gate Nanowire Field Effect Transistors
|
Li, Yiming |
