| 國立交通大學 |
2014-12-08T15:09:07Z |
The geometric effect and programming current reduction in cylindrical-shaped phase change memory
|
Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:09:00Z |
Random-Dopant-Induced Variability in Nano-CMOS Devices and Digital Circuits
|
Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh |
| 國立交通大學 |
2014-12-08T15:08:49Z |
The effect of the geometry aspect ratio on the silicon ellipse-shaped surrounding-gate field-effect transistor and circuit
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:08:40Z |
Doping profile and Ge-dose optimization for silicon-germanium heterojunction bipolar transistors
|
Li, Yiming; Chen, Ying-Chieh; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:08:37Z |
Numerical calculation of the reflectance of sub-wavelength structures on silicon nitride for solar cell application
|
Sahoo, Kartika Chandra; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:08:33Z |
Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; Yeh, Ta-Ching; Cheng, Hui-Wen; Chen, Hung-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:08:19Z |
Optimal Configuration of Hydrogen-Embrittlement-Fabricated Nanogaps for Surface-Conduction Electron-Emitter Display
|
Li, Yiming; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:08:18Z |
Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors
|
Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:08:06Z |
Silicon Nitride Nanopillars and Nanocones Formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application
|
Sahoo, Kartika Chandra; Lin, Men-Ku; Chang, Edward-Yi; Tinh, Tran Binh; Li, Yiming; Huang, Jin-Hua |
| 國立交通大學 |
2014-12-08T15:07:41Z |
Field emission property of CNT field emitters in the triode structure with anodic aluminum oxide template
|
Cheng, Hui-Wen; Lin, Chen-Chun; Li, Yiming; Pan, Fu-Ming |
| 國立交通大學 |
2014-12-08T15:07:40Z |
Comparative Study of Multigate and Multifin Metal-Oxide-Semiconductor Field-Effect Transistor
|
Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:07:40Z |
Minimal equivalent circuit extraction for high-speed PCB signal traces analysis
|
Kuo, Yi-Ting; Chao, Hsueh-Yung; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:07:40Z |
Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant Material
|
Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:07:35Z |
Effect of UV illumination on inverted-staggered a-Si : H thin film transistors
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Li, Yiming; Lou, Jen-Chung; Chen, Chung-Le; Hwang, Chih-Hong; Yan, Shuoting |
| 國立交通大學 |
2014-12-08T15:07:27Z |
Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies
|
Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:07:25Z |
A two-dimensional thin-film transistor simulation using adaptive computing technique
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:07:15Z |
Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations
|
Li, Yiming; Hwang, Chih-Hong; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:07:09Z |
2008 International Workshop on Scientific Computing in Electronics Engineering (WSCEE 2008) Preface
|
Li, Yiming; Dyshlovenko, Pavel; Ezaki, Tatsuya; Fjeldly, Tor A.; Kosina, Hans |
| 國立交通大學 |
2014-12-08T15:07:09Z |
Temperature-aware floorplanning via geometric programming
|
Chen, Ying-Chieh; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:07:09Z |
Simulation-based evolutionary method in antenna design optimization
|
Li, Yiming |
| 國立交通大學 |
2014-12-08T15:07:07Z |
Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants
|
Lee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:07:06Z |
Numerical simulation of static noise margin for a six-transistor static random access memory cell with 32nm fin-typed field effect transistors
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming |
| 國立交通大學 |
2014-12-08T15:06:56Z |
Forecasting global adoption of crystal display televisions with modified product diffusion model
|
Tsai, Bi-Huei; Li, Yiming; Lee, Guan-Hua |
| 國立交通大學 |
2014-12-08T15:06:44Z |
An optimal silicidation technique for electrostatic discharge protection sub-100 nm CMOS devices in VLSI circuit
|
Yu, Shao-Ming; Lee, Jam-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:06:38Z |
An automatic parameter extraction technique for advanced CMOS device modeling using genetic algorithm
|
Li, Yiming |