| 國立交通大學 |
2017-04-21T06:55:16Z |
Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs
|
Hou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Li, Yiming; Samukawa, Seiji; Hou, Tuo-Hung |
| 國立交通大學 |
2017-04-21T06:55:15Z |
A Novel Driving Method for High-Performance Amorphous Silicon Gate Driver Circuits in Flat Panel Display Industry
|
Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:59Z |
50% Efficiency Intermediate Band Solar Cell Design Using Highly Periodical Silicon Nanodisk Array
|
Hu, Weiguo; Igarashi, Makoto; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:49:47Z |
Experimentally Effective Clean Process to C-V Characteristic Variation Reduction of HKMG MOS Devices
|
Chen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan |
| 國立交通大學 |
2017-04-21T06:49:39Z |
3D 65nm CMOS with 320 degrees C Microwave Dopant Activation
|
Lee, Yao-Jen; Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo-Chin; Wan, Chia-Chen; Cheng, Tz-Yen; Han, Ming-Hung; Kowalski, Jeff M.; Kowalski, Jeff E.; Heh, Dawei; Chuang, Hsi-Ta; Li, Yiming; Chao, Tien-Sheng; Wu, Ching-Yi; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:49:39Z |
Electrical characteristic fluctuations in sub-45nm CMOS devices
|
Yang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Nanosized-Metal-Grain-Induced Characteristic Fluctuation in Gate-All-Around Si Nanowire Metal-Oxide-Semiconductor Devices
|
Lai, Chun-Ning; Chen, Chien-Yang; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Electronic Structure Dependence on the Density, Size and Shape of Ge/Si Quantum Dots Array
|
Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawat, Seiji |
| 國立交通大學 |
2017-04-21T06:49:27Z |
On Characteristic Fluctuation of Nonideal Bulk FinFET Devices
|
Li, Yiming; Huang, Wen-Tsung |
| 國立交通大學 |
2017-04-21T06:49:26Z |
Prioritization of Key In-Line Process Parameters for Electrical Characteristic Optimization of High-k Metal Gate Bulk FinFET Devices
|
Su, Ping-Husn; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:20Z |
Electrical Characteristic and Power Consumption Fluctuations of Trapezoidal Bulk FinFET Devices and Circuits Induced by Random Line Edge Roughness
|
Chen, Chieh-Yang; Huang, Wen-Tsung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:11Z |
Automatic generation of passive equivalent circuits for broadband microstrip antennas
|
Kuo, Yi-Ting; Chao, Hsueh-Yung (Robert); Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:09Z |
Novel strained CMOS devices with STI stress buffer layers
|
Chen, Hung-Ming; Hwang, Jiunn-Ren; Li, Yiming; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Miniband formulation in Ge/Si quantum dot array
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Process Technological Analysis for Dynamic Characteristic Improvement of 16-nm HKMG Bulk FinFET CMOS Circuits
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random Dopants
|
Sung, Wen-Li; Chang, Han-Tung; Chen, Chieh-Yang; Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Miniband Formulation of Bilayer Type II Ge/Si Quantum Dot Superlattices
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:50Z |
Numerical Simulation of Physical and Electrical Characteristics of Ge/Si Quantum Dots Based Intermediate Band Solar Cell
|
Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:44Z |
Type-II Ge/Si Quantum Dot superlattice for Intermediate-band Solar Cell Applications
|
Hu, Weiguo; Fauzi, Mohd Erman; Igarashi, Makoto; Higo, Akio; Lee, Ming-Yi; Li, Yiming; Usami, Noritaka; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Electrical Characteristic of InGaAs Multiple-Gate MOSFET Devices
|
Huang, Cheng-Hao; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:31Z |
Comprehensive Study on Reflectance of Si3N4 Subwavelength Structures for Silicon Solar Cell Applications Using 3D Finite Element Analysis
|
Lu, Zheng-Liang; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:31Z |
Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs
|
Cheng, Hui-Wen; Chiu, Yung-Yueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:30Z |
Simulation-Based Evolutionary Approach to Electrical Characteristic Optimization of p-i-n Silicon Thin-Film Solar Cells
|
Lu, Zheng-Liang; Li, Yiming; Cheng, Hui-Wen; Lo, I-Hsiu; Wang, Chao-Chu |
| 國立交通大學 |
2017-04-21T06:48:30Z |
Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors and Circuits
|
Shen, Cheng-Han; Lo, I-Hsiu; Li, Yiming |
