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Showing items 56-80 of 310 (13 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:49:39Z |
Electrical characteristic fluctuations in sub-45nm CMOS devices
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Yang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Nanosized-Metal-Grain-Induced Characteristic Fluctuation in Gate-All-Around Si Nanowire Metal-Oxide-Semiconductor Devices
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Lai, Chun-Ning; Chen, Chien-Yang; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Electronic Structure Dependence on the Density, Size and Shape of Ge/Si Quantum Dots Array
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Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawat, Seiji |
| 國立交通大學 |
2017-04-21T06:49:27Z |
On Characteristic Fluctuation of Nonideal Bulk FinFET Devices
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Li, Yiming; Huang, Wen-Tsung |
| 國立交通大學 |
2017-04-21T06:49:26Z |
Prioritization of Key In-Line Process Parameters for Electrical Characteristic Optimization of High-k Metal Gate Bulk FinFET Devices
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Su, Ping-Husn; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:20Z |
Electrical Characteristic and Power Consumption Fluctuations of Trapezoidal Bulk FinFET Devices and Circuits Induced by Random Line Edge Roughness
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Chen, Chieh-Yang; Huang, Wen-Tsung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:11Z |
Automatic generation of passive equivalent circuits for broadband microstrip antennas
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Kuo, Yi-Ting; Chao, Hsueh-Yung (Robert); Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:09Z |
Novel strained CMOS devices with STI stress buffer layers
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Chen, Hung-Ming; Hwang, Jiunn-Ren; Li, Yiming; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Miniband formulation in Ge/Si quantum dot array
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Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Process Technological Analysis for Dynamic Characteristic Improvement of 16-nm HKMG Bulk FinFET CMOS Circuits
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Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random Dopants
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Sung, Wen-Li; Chang, Han-Tung; Chen, Chieh-Yang; Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Miniband Formulation of Bilayer Type II Ge/Si Quantum Dot Superlattices
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Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:50Z |
Numerical Simulation of Physical and Electrical Characteristics of Ge/Si Quantum Dots Based Intermediate Band Solar Cell
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Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:44Z |
Type-II Ge/Si Quantum Dot superlattice for Intermediate-band Solar Cell Applications
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Hu, Weiguo; Fauzi, Mohd Erman; Igarashi, Makoto; Higo, Akio; Lee, Ming-Yi; Li, Yiming; Usami, Noritaka; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Electrical Characteristic of InGaAs Multiple-Gate MOSFET Devices
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Huang, Cheng-Hao; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications
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Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:31Z |
Comprehensive Study on Reflectance of Si3N4 Subwavelength Structures for Silicon Solar Cell Applications Using 3D Finite Element Analysis
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Lu, Zheng-Liang; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:31Z |
Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs
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Cheng, Hui-Wen; Chiu, Yung-Yueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:30Z |
Simulation-Based Evolutionary Approach to Electrical Characteristic Optimization of p-i-n Silicon Thin-Film Solar Cells
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Lu, Zheng-Liang; Li, Yiming; Cheng, Hui-Wen; Lo, I-Hsiu; Wang, Chao-Chu |
| 國立交通大學 |
2017-04-21T06:48:30Z |
Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors and Circuits
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Shen, Cheng-Han; Lo, I-Hsiu; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:22Z |
On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps
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Li, Yiming; Su, Hsin-Wen; Chen, Chieh-Yang; Cheng, Hui-Wen; Chen, Yu-Yu; Chang, Han-Tung |
| 國立交通大學 |
2017-04-21T06:48:21Z |
Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-kappa/Metal Gate Bulk and SOI FinFETs
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Su, Hsin-Wen; Chen, Yu-Yu; Chen, Chieh-Yang; Cheng, Hui-Wen; Chang, Han-Tung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
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Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications
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Lee, Yao-Jen; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Hsueh, Fu-Kuo; Hou, Fu-Ju; Chen, Po-Cheng; Chen, Hsiu-Chih; Wu, Chien-Ting; Hsu, Shu-Han; Chen, Yi-Ju; Huang, Yao-Ming; Hou, Yun-Fang; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Bo-Yuan; Lin, Kun-Lin; Chen, Min-Cheng; Shen, Chang-Hong; Huang, Guo-Wei; Huang, Kun-Ping; Current, Michael I.; Li, Yiming; Samukawa, Seiji; Wu, Wen-Fa; Shieh, Jia-Min; Chao, Tien-Sheng; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices
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Li, Yiming; Chang, Han-Tung; Lai, Chun-Ning; Chao, Pei-Jung; Chen, Chieh-Yang |
Showing items 56-80 of 310 (13 Page(s) Totally)
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