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Showing items 91-100 of 310 (31 Page(s) Totally)
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| 國立交通大學 |
2015-07-21T11:20:49Z |
Electrical characteristic fluctuation of 16-nm-gate high-kappa/metal gate bulk FinFET devices in the presence of random interface traps
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Hsu, Sheng-Chia; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:31:31Z |
On Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation Effect
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Chen, Chieh-Yang; Li, Yiming; Chen, Yu-Yu; Chang, Han-Tung; Hsu, Sheng-Chia; Huang, Wen-Tsung; Yang, Chin-Min; Chen, Li-Wen |
| 國立交通大學 |
2015-07-21T08:31:29Z |
Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETs
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Chen, Yu-Yu; Huang, Wen-Tsung; Hsu, Sheng-Chia; Chang, Han-Tung; Chen, Chieh-Yang; Yang, Chin-Min; Chen, Li-Wen; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:31:18Z |
Numerical Simulation of Field Enhancement Property of Surface Enhanced Raman Spectroscopy Active Substrates
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Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:31:14Z |
Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor
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Shrestha, Niraj Man; Lin, Yueh-Chin; Chang, Han-Tung; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2015-07-21T08:31:14Z |
Design Optimization of 16-nm Bulk FinFET Technology via Geometric Programming
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Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:29:54Z |
Source/Drain Series Resistance Extraction in HKMG Multifin Bulk FinFET Devices
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Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:29:33Z |
Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET Devices
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Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:29:23Z |
Capacitance Characteristic Optimization of Germanium MOSFETs with Aluminum Oxide by Using a Semiconductor-Device-Simulation-Based Multi-Objective Evolutionary Algorithm Method
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Li, Yiming; Chen, Chieh-Yang |
| 國立交通大學 |
2015-07-21T08:29:13Z |
Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs
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Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu |
Showing items 91-100 of 310 (31 Page(s) Totally)
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