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Taiwan Academic Institutional Repository >
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"li ym"
Showing items 11-35 of 54 (3 Page(s) Totally) 1 2 3 > >> View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:42:08Z |
Calculation of induced electron states in three-dimensional semiconductor artificial molecules
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
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Li, YM; Lee, JW; Tang, TW; Chao, TS; Lei, TF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:42Z |
Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential
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Li, YM; Tang, TW; Wang, XL |
| 國立交通大學 |
2014-12-08T15:41:42Z |
A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition
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Tang, TW; Li, YM |
| 國立交通大學 |
2014-12-08T15:41:17Z |
An investigation of magnetic field effects on energy states for nanoscale InAs/GaAs quantum rings and dots
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Li, YM; Lu, HM |
| 國立交通大學 |
2014-12-08T15:41:11Z |
Optimization of the anti-punch-through implant for electrostatic discharge protection circuit design
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Li, YM; Lee, JW; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:08Z |
A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization
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Li, YM; Cho, YY; Wang, CS; Huang, KY |
| 國立交通大學 |
2014-12-08T15:41:08Z |
Geometric variations and magnetic field effects on electron energy states of InAs/GaAs quantum rings
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Li, YM; Lu, HM |
| 國立交通大學 |
2014-12-08T15:40:53Z |
A novel numerical approach to heterojunction bipolar transistors circuit simulation
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Li, YM; Huang, KY |
| 國立交通大學 |
2014-12-08T15:40:46Z |
Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings
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Li, YM; Lu, HM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:40:41Z |
A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
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Li, YM |
| 國立交通大學 |
2014-12-08T15:40:17Z |
Numerical calculation of electron energy states for nanoscopic InAs/GaAs quantum rings
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Li, YM |
| 國立交通大學 |
2014-12-08T15:40:14Z |
A time-domain approach to simulation and characterization of RF HBT two-tone intermodulation distortion
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Huang, KY; Li, YM; Lee, CP |
| 國立交通大學 |
2014-12-08T15:39:25Z |
Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors
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Chao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:22Z |
Intelligent BSIM4 model parameter extraction for sub-100 nm MOSFET era
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Li, YM; Cho, YY |
| 國立交通大學 |
2014-12-08T15:39:22Z |
Electron transition energy for vertically coupled InAs/GaAs semiconductor quantum dots and rings
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Li, YM; Lu, HM |
| 國立交通大學 |
2014-12-08T15:39:22Z |
Electrostatic discharge protection under pad design for copper-low-K VLSI circuits
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Lee, JW; Li, YM; Chao, A; Tang, H |
| 國立交通大學 |
2014-12-08T15:38:54Z |
A two-dimensional quantum transport simulation of nanoscale double-gate MOSFETs using parallel adaptive technique
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Li, YM; Yu, SM |
| 國立交通大學 |
2014-12-08T15:38:53Z |
A quantum correction Poisson equation for metal-oxide-semiconductor structure simulation
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Li, YM |
| 國立交通大學 |
2014-12-08T15:38:46Z |
A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditions
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Li, YM; Yu, SM |
| 國立交通大學 |
2014-12-08T15:38:43Z |
Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models
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Huang, KY; Li, YM; Lee, CP |
| 國立交通大學 |
2014-12-08T15:38:31Z |
Vertical coupling effects and transition energies in multilayer InAs/GaAs quantum dots
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Li, YM |
| 國立交通大學 |
2014-12-08T15:37:08Z |
Numerical simulation of self-heating InGaP/GaAs heterojunction bipolar transistors
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Li, YM; Huang, KY |
| 國立交通大學 |
2014-12-08T15:37:07Z |
Application of parallel adaptive computing technique to polysilicon thin-film transistor simulation
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Li, YM |
| 國立交通大學 |
2014-12-08T15:37:07Z |
Parallelization of multiple genome alignment
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Li, YM; Chen, CK |
Showing items 11-35 of 54 (3 Page(s) Totally) 1 2 3 > >> View [10|25|50] records per page
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