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Institution Date Title Author
國立交通大學 2019-04-03T06:39:50Z Energy states and magnetization in nanoscale quantum rings Voskoboynikov, O; Li, YM; Lu, HM; Shih, CF; Lee, CP
國立交通大學 2014-12-08T15:44:47Z A mixed lubrication model for computer simulation of extrusion processes Hsu , TC; Li, YM; Hung, CH
國立交通大學 2014-12-08T15:44:23Z Energy and coordinate dependent effective mass and confined electron states in quantum dots Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM
國立交通大學 2014-12-08T15:43:18Z Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot Li, YM; Liu, JL; Voskoboynikov, O; Lee, CP; Sze, SM
國立交通大學 2014-12-08T15:43:13Z Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM
國立交通大學 2014-12-08T15:43:08Z Electron energy state dependence on the shape and size of semiconductor quantum dots Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O
國立交通大學 2014-12-08T15:43:08Z A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices Li, YM; Liu, JL; Chao, TS; Sze, SM
國立交通大學 2014-12-08T15:42:33Z Effect of shape and size on electron transition energies of InAs semiconductor quantum dots Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O
國立交通大學 2014-12-08T15:42:29Z A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O
國立交通大學 2014-12-08T15:42:10Z A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET Li, YM; Chao, TS; Sze, SM
國立交通大學 2014-12-08T15:42:08Z Calculation of induced electron states in three-dimensional semiconductor artificial molecules Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM
國立交通大學 2014-12-08T15:42:08Z Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models Li, YM; Lee, JW; Tang, TW; Chao, TS; Lei, TF; Sze, SM
國立交通大學 2014-12-08T15:41:42Z Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential Li, YM; Tang, TW; Wang, XL
國立交通大學 2014-12-08T15:41:42Z A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition Tang, TW; Li, YM
國立交通大學 2014-12-08T15:41:17Z An investigation of magnetic field effects on energy states for nanoscale InAs/GaAs quantum rings and dots Li, YM; Lu, HM
國立交通大學 2014-12-08T15:41:11Z Optimization of the anti-punch-through implant for electrostatic discharge protection circuit design Li, YM; Lee, JW; Sze, SM
國立交通大學 2014-12-08T15:41:08Z A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization Li, YM; Cho, YY; Wang, CS; Huang, KY
國立交通大學 2014-12-08T15:41:08Z Geometric variations and magnetic field effects on electron energy states of InAs/GaAs quantum rings Li, YM; Lu, HM
國立交通大學 2014-12-08T15:40:53Z A novel numerical approach to heterojunction bipolar transistors circuit simulation Li, YM; Huang, KY
國立交通大學 2014-12-08T15:40:46Z Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings Li, YM; Lu, HM; Voskoboynikov, O; Lee, CP; Sze, SM
國立交通大學 2014-12-08T15:40:41Z A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation Li, YM
國立交通大學 2014-12-08T15:40:17Z Numerical calculation of electron energy states for nanoscopic InAs/GaAs quantum rings Li, YM
國立交通大學 2014-12-08T15:40:14Z A time-domain approach to simulation and characterization of RF HBT two-tone intermodulation distortion Huang, KY; Li, YM; Lee, CP
國立交通大學 2014-12-08T15:39:25Z Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors Chao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY
國立交通大學 2014-12-08T15:39:22Z Intelligent BSIM4 model parameter extraction for sub-100 nm MOSFET era Li, YM; Cho, YY

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