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"liang m s"
Showing items 36-38 of 38 (4 Page(s) Totally)
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| 國立成功大學 |
2003-04 |
Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide
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Yang, Chih-Wei; Fang, Yean-Kuen; Ting, S. F.; Chen, C. H.; Wang, W. D.; Lin, T. Y.; Wang, M. F.; Yu, M. C.; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, C. H.; Liang, M. S. |
| 國立成功大學 |
2003-01 |
Improvement of short-channel characteristics of a 0.1-mu m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Wang, W. D.; Ting, S. F.; Cheng, J. Y.; Wang, M. F.; Chen, C. L.; Yao, Liang-Gi; Lee, T. L.; Chen, S. C.; Yu, C. H.; Liang, M. S. |
| 國立臺灣科技大學 |
2003 |
Characteristics of DC reactively sputtered (Ti,Zr)N thin films as diffusion barriers for Cu metallization
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Kuo, Y.L.;Lee, C.;Lin, J.C.;Peng, C.H.;Chen, L.C.;Hsieh, C.H.;Shue, S.L.;Liang, M.S.;Daniels, B.J.;Huang, C.L.;Lai, C.H. |
Showing items 36-38 of 38 (4 Page(s) Totally)
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