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"liang m s"的相关文件
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| 國立交通大學 |
2014-12-08T15:06:33Z |
Oxygen vacancy estimation of high k metal gate using thermal dynamic model
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Chang, H. L.; Liang, M. S. |
| 國立成功大學 |
2009-08 |
The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETs
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Cheng, C. Y.; Fang, Yean-Kuen; Liao, J. C.; Wang, T. J.; Hou, Y. T.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S. |
| 國立成功大學 |
2008-11-10 |
The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks
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Liao, Jia-Ching; Fang, Yean-Kuen; Chen, C. H.; Hou, Y. T.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S. |
| 國立成功大學 |
2008-09-01 |
Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks
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Liao, J. C.; Fang, Yean-Kuen; Hou, Y. T.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S. |
| 國立成功大學 |
2008-05 |
Investigation of bulk traps enhanced gate-induced leakage current in Hf-based MOSFETs
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Liao, Jia-Ching; Fang, Yean-Kuen; Hou, Y. T.; Tseng, W. H.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S. |
| 國立成功大學 |
2008-04-30 |
Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique
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Liao, J. C.; Fang, Yean-Kuen; Hou, Y. T.; Wu, W. H.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S. |
| 國立成功大學 |
2007-04 |
High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-09 |
HfSiON n-MOSFETs using low-work function HfSi chi gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-06 |
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2005-10 |
Reliability studies of Hf-doped and NH3-nitrided gate dielectric for advanced CMOS application
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Yang, Chih-Wei; Liang, M. S.; Fang, Yean-Kuen; Hou, T. H.; Yao, Liang-Gi; Chen, S. C.; Chen, S. F.; Lin, C. S.; Lin, C. Y.; Wang, W. D.; CHou, T. H.; Lin, P. J. |
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