臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:06:33Z	Oxygen vacancy estimation of high k metal gate using thermal dynamic model	Chang, H. L.; Liang, M. S.
國立成功大學	2009-08	The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETs	Cheng, C. Y.; Fang, Yean-Kuen; Liao, J. C.; Wang, T. J.; Hou, Y. T.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2008-11-10	The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks	Liao, Jia-Ching; Fang, Yean-Kuen; Chen, C. H.; Hou, Y. T.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2008-09-01	Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks	Liao, J. C.; Fang, Yean-Kuen; Hou, Y. T.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2008-05	Investigation of bulk traps enhanced gate-induced leakage current in Hf-based MOSFETs	Liao, Jia-Ching; Fang, Yean-Kuen; Hou, Y. T.; Tseng, W. H.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2008-04-30	Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique	Liao, J. C.; Fang, Yean-Kuen; Hou, Y. T.; Wu, W. H.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2007-04	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立成功大學	2006-09	HfSiON n-MOSFETs using low-work function HfSi chi gate	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立成功大學	2006-06	HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立成功大學	2005-10	Reliability studies of Hf-doped and NH3-nitrided gate dielectric for advanced CMOS application	Yang, Chih-Wei; Liang, M. S.; Fang, Yean-Kuen; Hou, T. H.; Yao, Liang-Gi; Chen, S. C.; Chen, S. F.; Lin, C. S.; Lin, C. Y.; Wang, W. D.; CHou, T. H.; Lin, P. J.
國立臺灣科技大學	2004	Growth of (Ti, Zr)N films on Si by DC reactive sputtering of TiZr in N2/Ar gas mixtures - Effect of flow ratio	Kuo, Y.L.;Lee, C.;Lin, J.C.;Peng, C.H.;Chen, L.C.;Hsieh, C.H.;Shue, S.L.;Liang, M.S.;Daniels, B.J.;Huang, C.L.;Lai, C.H.
國立臺灣科技大學	2004	Diffusion of copper in titanium zirconium nitride thin films	Kuo, Y.L.;Lee, H.H.;Lee, C.;Lin, J.C.;Shue, S.L.;Liang, M.S.;Daniels, B.J.
國立成功大學	2003-10-16	Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift	Yang, Chih-Wei; Fang, Yean-Kuen; Lin, C. S.; Tsair, Y. S.; Chen, Shi-Ming; Wang, W. D.; Wang, M. F.; Cheng, Juing-Yi; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S.
國立成功大學	2003-07-14	Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric	Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Chen, S. F.; Lin, C. Y.; Lin, C. S.; Wang, M. F.; Lin, Y. M.; Hou, T. H.; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S.
國立成功大學	2003-04-17	HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application	Yang, Chih-Wei; Fang, Yean-Kuen; Chen, S. F.; Wang, M. F.; Hou, T. H.; Lin, Y. M.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S.
國立成功大學	2003-04	Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide	Yang, Chih-Wei; Fang, Yean-Kuen; Ting, S. F.; Chen, C. H.; Wang, W. D.; Lin, T. Y.; Wang, M. F.; Yu, M. C.; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, C. H.; Liang, M. S.
國立成功大學	2003-01	Improvement of short-channel characteristics of a 0.1-mu m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment	Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Wang, W. D.; Ting, S. F.; Cheng, J. Y.; Wang, M. F.; Chen, C. L.; Yao, Liang-Gi; Lee, T. L.; Chen, S. C.; Yu, C. H.; Liang, M. S.
國立臺灣科技大學	2003	Characteristics of DC reactively sputtered (Ti,Zr)N thin films as diffusion barriers for Cu metallization	Kuo, Y.L.;Lee, C.;Lin, J.C.;Peng, C.H.;Chen, L.C.;Hsieh, C.H.;Shue, S.L.;Liang, M.S.;Daniels, B.J.;Huang, C.L.;Lai, C.H.

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