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Showing items 1-25 of 27 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:15:37Z |
Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurement
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Wu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song |
| 國立交通大學 |
2014-12-08T15:14:46Z |
High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs
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Hung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, Shih C.; Liang, Mong-Song |
| 國立交通大學 |
2014-12-08T15:13:52Z |
Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method
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Wu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song |
| 國立成功大學 |
2007-02 |
High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs
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Hung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, Shih C.; Liang, Mong-Song |
| 國立成功大學 |
2003-03-06 |
Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Shih-Fang; Lin, Chun-Yu; Wang, Ming-Fang; Lin, Yeou-Ming; Hou, Tuo-Hung; Yao, Liang-Gi; Chen, Shih-Chang; Liang, Mong-Song |
| 國立成功大學 |
2002-09-26 |
Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with AI(2)O(3) capping layer
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Chien-Hao; Wang, Wen-De; Lin, Tin-Yu; Wang, Ming-Fang; Hou, Tuo-Hung; Cheng, Juing-Yi; Yao, Liang-Gi; Chen, Shyh-Chang; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-05 |
Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation
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Chen, Chien-Hao; Fang, Yean-Kuen; Ting, Shyh-Fann; Hsieh, Wen-Tse; Yang, Chih-Wei; Hsu, Tzu-Hsuan; Yu, Mo-Chiun; Lee, Tze-Liang; Chen, Shih-Chang; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 mu m and beyond CMOS technology application
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Hou, Tuo-Hong; Wang, Ming-Fang; Yu, Mo-Chiun; Lin, Chuing-Liang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-12 |
To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment
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Chen, Chein-Hao; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Hou, Tuo-Hong; Yu, Mo-Chiun; Chen, Shih-Chang; Jang, Syun-Ming; Yu, D. C. H.; Liang, Mong-Song |
| 國立成功大學 |
2001-10-25 |
Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides
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Chen, Chung-Hui; Fang, Yean-Kuen; Hsieh, Wen-Tse; Ting, Shyh-Fann; Yu, Mo-Chiun; Wang, Ming-Fang; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-08 |
Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Yu, Mo-Chiun; Hou, Tuo-Hung; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-07 |
The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 mu m CMOS technology and beyond
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Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chung-Hui; Yang, Chih-Wei; Hsieh, Wen-Tse; Ho, Jyh-Jier; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, S; Shih, R |
| 國立成功大學 |
2001-06-07 |
He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications
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Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chien-Hao; Yang, Chih-Wei; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, Sun-Way; Shih, R. |
| 國立成功大學 |
2001-06 |
High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Lin, Yu-Min; Yu, Mo-Chiun; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-03 |
Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-02-01 |
Subthreshold characteristics of submicrometer polysilicon thin film transistor
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Yaung, Dun-Nian; Fang, Yean-Kuen; Huang, Kuo-Ching; Wang, Y. J.; Hung, C. C.; Liang, Mong-Song; Wuu, Shou-Gwo |
| 國立成功大學 |
2001-02 |
A novel programming technique for highly scalable and disturbance immune flash EEPROM
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Huang, Kuo-Ching; Fang, Yean-Kuen; Yaung, Dun-Nian; Chen, Chung-Hui; Hsu, Yung-Lung; Ting, Shyh-Fann; Lin, Yvonne; Kuo, Di-son; Wang, Chung S.; Liang, Mong-Song |
| 國立成功大學 |
2001-01 |
To suppress photoexcited current of hydrogenated polysilicon TFTs with low temperature oxidation of polychannel
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Yaung, Dun-Nian; Fang, Yean-Kuen; Chen, Chung-Hui; Hung, C. C.; Tsao, F. C.; Wuu, Shou-Gwo; Liang, Mong-Song |
| 國立成功大學 |
2000-11-01 |
High performance submicron bottom gate TFTs with self aligned Ti-silicide interpoly contact and poly-channel oxidation for high-density SRAM
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Yaung, Dun-Nian; Fang, Yean-Kuen; Huang, Kuo-Ching; Chen, Chin-Ying; Wang, Y. J.; Hung, C. C.; Wuu, Shou-Gwo; Liang, Mong-Song |
| 國立成功大學 |
2000-09 |
Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress
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Yaung, Dun-Nian; Fang, Yean-Kuen; Huang, Kuo-Ching; Chen, Chin-Ying; Wang, Y. J.; Hung, C. C.; Wuu, Shou-Gwo; Liang, Mong-Song |
| 國立成功大學 |
2000-07 |
The impacts of control gate voltage on the cycling endurance of split gate flash memory
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Huang, Kuo-Ching; Fang, Yean-Kuen; Yaung, Dun-Nian; Chen, Chii-Wen; Sung, Hung-Cheng; Kuo, Di-Son; Wang, Chung-Shu; Liang, Mong-Song |
| 國立成功大學 |
2000-02 |
The punchthrough phenomena in submicron polysilicon thin-film transistors
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Yaung, Dun-Nian; Fang, Yean-Kuen; Huang, Kuo-Ching; Wang, Y. J.; Hung, C. C.; Liang, Mong-Song; Wu, S. G. |
| 國立成功大學 |
1999-11-25 |
Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact
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Yaung, Dun-Nian; Fang, Yean-Kuen; Huang, Kuo-Ching; Wuu, Shou-Gwo; Wang, Chung-Shu; Liang, Mong-Song |
Showing items 1-25 of 27 (2 Page(s) Totally)
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