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| 國立交通大學 |
2019-04-02T06:00:18Z |
Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO2 high-k gate stacks
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Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:46:37Z |
Reliability of ultrathin gate oxides for ULSI devices
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Chang, CY; Chen, CC; Lin, HC; Liang, MS; Chien, CH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:46:29Z |
Temperature-accelerated dielectric breakdown in ultrathin gate oxides
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Chen, CC; Chang, CY; Chien, CH; Huang, TY; Lin, HC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:46:14Z |
A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cycles
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Chung, SS; Yih, CM; Cheng, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:52Z |
Improved immunity to plasma damage in ultrathin nitrided oxides
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Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY |
| 國立交通大學 |
2014-12-08T15:45:46Z |
Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides
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Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:26Z |
Monte Carlo sphere model for effective oxide thinning induced extrinsic breakdown
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Huang, HT; Chen, MJ; Chen, JH; Su, CW; Hou, CS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:15Z |
Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation
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Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:05Z |
Plasma-induced charging damage in ultrathin (3-nm) gate oxides
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Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:58Z |
Detection of the defects induced by boron high-energy ion implantation of silicon
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Hsu, WC; Chen, MC; Liang, MS |
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