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機構	日期	題名	作者
國立交通大學	2014-12-08T15:40:39Z	Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane	Chiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:40:39Z	Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films	Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:40:31Z	Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contents	Chiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:39:57Z	Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier	Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:39:57Z	Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2	Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:39:52Z	Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane	Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:39:42Z	Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers	Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:39:40Z	TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier	Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:38:46Z	Annealing effect on boron high-energy-ion-implantation-induced defects in	Hsu, WC; Liang, MS; Chen, SC; Chen, MC
國立交通大學	2014-12-08T15:37:21Z	Effects of O-2- and N-2-plasma treatments on copper surface	Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:27:25Z	A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles	Chung, SS; Yih, CM; Cheng, SM; Liang, MS
國立交通大學	2014-12-08T15:27:02Z	Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide	Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS
國立交通大學	2014-12-08T15:27:02Z	Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation	Chen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS
國立交通大學	2014-12-08T15:27:01Z	Electrical reliability issues of integrating low-K dielectrics with Cu metallization	Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:57Z	Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs	Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:55Z	N-channel versus P-channel flash EEPROM - Which one has better reliabilities	Chung, SS; Liaw, ST; Yih, CM; Ho, ZH; Lin, CJ; Kuo, DS; Liang, MS
國立交通大學	2014-12-08T15:26:48Z	Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides	Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:48Z	Barrier characteristics of PECVD alpha-SiC : H dielectrics	Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:29Z	TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier	Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:17Z	Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology	Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:26:16Z	Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier	Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:26:10Z	The performance and reliability enhancement of ETOX P-channel flash EEPROM cell with P-doped floating-gate	Tsai, HW; Chiang, PY; Chung, SS; Kuo, DS; Liang, MS
國立交通大學	2014-12-08T15:25:51Z	The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology	Chung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:25:43Z	Effects of base oxide in HfSiO/SiO2 high-k gate stacks	Wu, WH; Chen, MC; Wang, MF; Hou, TH; Yao, LG; Jin, Y; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:18:40Z	Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks	Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:17:09Z	Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stack	Chung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:16:41Z	Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide	Wu, WH; Tsui, BY; Huang, YP; Hsieh, FC; Chen, MC; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:16:30Z	HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide	Wu, CH; Hung, BF; Chin, A; Wang, SJ; Yen, FY; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:04:48Z	CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATION	WU, SL; LEE, CL; LEI, TF; LIANG, MS
國立交通大學	2014-12-08T15:02:08Z	Investigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysilicon	Wu, SL; Chen, CY; Lin, TY; Lee, CL; Lei, TF; Liang, MS
國立臺灣大學	2009-07	Absorption of ethanol into water and glycerol/water solution in a rotating packed bed	Chiang, CY; Chen, YS; Liang, MS; Lin, FY; Tai, CYD; Liu, HS

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