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Showing items 31-40 of 56  (6 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:39:52Z Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:39:42Z Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:39:40Z TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:38:46Z Annealing effect on boron high-energy-ion-implantation-induced defects in Hsu, WC; Liang, MS; Chen, SC; Chen, MC
國立交通大學 2014-12-08T15:37:21Z Effects of O-2- and N-2-plasma treatments on copper surface Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:27:25Z A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles Chung, SS; Yih, CM; Cheng, SM; Liang, MS
國立交通大學 2014-12-08T15:27:02Z Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS
國立交通大學 2014-12-08T15:27:02Z Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation Chen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS
國立交通大學 2014-12-08T15:27:01Z Electrical reliability issues of integrating low-K dielectrics with Cu metallization Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:26:57Z Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS

Showing items 31-40 of 56  (6 Page(s) Totally)
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