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"liang ms"的相关文件
显示项目 36-45 / 56 (共6页)
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| 國立交通大學 |
2014-12-08T15:27:25Z |
A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles
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Chung, SS; Yih, CM; Cheng, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
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Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation
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Chen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
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Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:57Z |
Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:55Z |
N-channel versus P-channel flash EEPROM - Which one has better reliabilities
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Chung, SS; Liaw, ST; Yih, CM; Ho, ZH; Lin, CJ; Kuo, DS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Barrier characteristics of PECVD alpha-SiC : H dielectrics
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Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:29Z |
TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology
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Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS |
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