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"liang ms"的相關文件
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| 國立交通大學 |
2019-04-02T06:00:18Z |
Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO2 high-k gate stacks
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Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:46:37Z |
Reliability of ultrathin gate oxides for ULSI devices
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Chang, CY; Chen, CC; Lin, HC; Liang, MS; Chien, CH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:46:29Z |
Temperature-accelerated dielectric breakdown in ultrathin gate oxides
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Chen, CC; Chang, CY; Chien, CH; Huang, TY; Lin, HC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:46:14Z |
A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cycles
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Chung, SS; Yih, CM; Cheng, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:52Z |
Improved immunity to plasma damage in ultrathin nitrided oxides
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Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY |
| 國立交通大學 |
2014-12-08T15:45:46Z |
Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides
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Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:26Z |
Monte Carlo sphere model for effective oxide thinning induced extrinsic breakdown
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Huang, HT; Chen, MJ; Chen, JH; Su, CW; Hou, CS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:15Z |
Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation
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Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:05Z |
Plasma-induced charging damage in ultrathin (3-nm) gate oxides
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Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:58Z |
Detection of the defects induced by boron high-energy ion implantation of silicon
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Hsu, WC; Chen, MC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:44:57Z |
Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides
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Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:44:39Z |
A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
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Yang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:44:13Z |
Characterization of hot-hole injection induced SILC and related disturbs in flash memories
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Yih, CM; Ho, ZH; Liang, MS; Chung, SS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
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Wu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
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Wu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:46Z |
Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:46Z |
A trap generation closed-form statistical model for intrinsic oxide breakdown
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Huang, HT; Chen, MJ; Su, CW; Chen, JH; Hou, CS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SSM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Generalized interconnect delay time and crosstalk models: I. Applications of interconnect optimization design
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Lee, TGY; Tseng, TY; Wong, SC; Yang, CJ; Liang, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Generalized interconnect delay time and crosstalk models: II. Crosstalk-induced delay time deterioration and worst crosstalk models
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Lee, TGY; Tseng, TY; Wong, SC; Yang, CJ; Liang, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:42:45Z |
Implantation induced defects in the retrograde well with a buried layer
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Hsu, WC; Liang, MS; Chen, MC |
| 國立交通大學 |
2014-12-08T15:42:27Z |
Post-implantation thermal annealing effect on the gate oxide of triple-well-structure
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Hsu, WC; Liang, MS; Lin, CT; Chen, MC |
| 國立交通大學 |
2014-12-08T15:41:51Z |
A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film
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Wang, JC; Chiao, SH; Lee, CL; Lei, TF; Lin, YM; Wang, MF; Chen, SC; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane
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Chiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films
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Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:31Z |
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contents
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Chiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane
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Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:40Z |
TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:38:46Z |
Annealing effect on boron high-energy-ion-implantation-induced defects in
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Hsu, WC; Liang, MS; Chen, SC; Chen, MC |
| 國立交通大學 |
2014-12-08T15:37:21Z |
Effects of O-2- and N-2-plasma treatments on copper surface
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Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:25Z |
A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles
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Chung, SS; Yih, CM; Cheng, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
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Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation
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Chen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
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Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:57Z |
Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:55Z |
N-channel versus P-channel flash EEPROM - Which one has better reliabilities
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Chung, SS; Liaw, ST; Yih, CM; Ho, ZH; Lin, CJ; Kuo, DS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Barrier characteristics of PECVD alpha-SiC : H dielectrics
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Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:29Z |
TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology
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Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:16Z |
Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:10Z |
The performance and reliability enhancement of ETOX P-channel flash EEPROM cell with P-doped floating-gate
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Tsai, HW; Chiang, PY; Chung, SS; Kuo, DS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:25:51Z |
The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology
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Chung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:25:43Z |
Effects of base oxide in HfSiO/SiO2 high-k gate stacks
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Wu, WH; Chen, MC; Wang, MF; Hou, TH; Yao, LG; Jin, Y; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:18:40Z |
Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks
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Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
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