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Institution	Date	Title	Author
國立交通大學	2019-04-02T06:00:18Z	Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO2 high-k gate stacks	Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:46:37Z	Reliability of ultrathin gate oxides for ULSI devices	Chang, CY; Chen, CC; Lin, HC; Liang, MS; Chien, CH; Huang, TY
國立交通大學	2014-12-08T15:46:29Z	Temperature-accelerated dielectric breakdown in ultrathin gate oxides	Chen, CC; Chang, CY; Chien, CH; Huang, TY; Lin, HC; Liang, MS
國立交通大學	2014-12-08T15:46:14Z	A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cycles	Chung, SS; Yih, CM; Cheng, SM; Liang, MS
國立交通大學	2014-12-08T15:45:52Z	Improved immunity to plasma damage in ultrathin nitrided oxides	Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY
國立交通大學	2014-12-08T15:45:46Z	Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides	Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS
國立交通大學	2014-12-08T15:45:26Z	Monte Carlo sphere model for effective oxide thinning induced extrinsic breakdown	Huang, HT; Chen, MJ; Chen, JH; Su, CW; Hou, CS; Liang, MS
國立交通大學	2014-12-08T15:45:15Z	Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation	Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS
國立交通大學	2014-12-08T15:45:05Z	Plasma-induced charging damage in ultrathin (3-nm) gate oxides	Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS
國立交通大學	2014-12-08T15:44:58Z	Detection of the defects induced by boron high-energy ion implantation of silicon	Hsu, WC; Chen, MC; Liang, MS
國立交通大學	2014-12-08T15:44:57Z	Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides	Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS
國立交通大學	2014-12-08T15:44:39Z	A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides	Yang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS
國立交通大學	2014-12-08T15:44:13Z	Characterization of hot-hole injection induced SILC and related disturbs in flash memories	Yih, CM; Ho, ZH; Liang, MS; Chung, SS
國立交通大學	2014-12-08T15:43:49Z	Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK	Wu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS
國立交通大學	2014-12-08T15:43:49Z	Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides	Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:43:48Z	Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric	Wu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:43:48Z	Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides	Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:43:46Z	Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs	Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS
國立交通大學	2014-12-08T15:43:46Z	A trap generation closed-form statistical model for intrinsic oxide breakdown	Huang, HT; Chen, MJ; Su, CW; Chen, JH; Hou, CS; Liang, MS
國立交通大學	2014-12-08T15:43:09Z	Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs	Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SSM; Yu, DCH; Liang, MS
國立交通大學	2014-12-08T15:43:09Z	Generalized interconnect delay time and crosstalk models: I. Applications of interconnect optimization design	Lee, TGY; Tseng, TY; Wong, SC; Yang, CJ; Liang, MS; Cheng, HC
國立交通大學	2014-12-08T15:43:09Z	Generalized interconnect delay time and crosstalk models: II. Crosstalk-induced delay time deterioration and worst crosstalk models	Lee, TGY; Tseng, TY; Wong, SC; Yang, CJ; Liang, MS; Cheng, HC
國立交通大學	2014-12-08T15:42:45Z	Implantation induced defects in the retrograde well with a buried layer	Hsu, WC; Liang, MS; Chen, MC
國立交通大學	2014-12-08T15:42:27Z	Post-implantation thermal annealing effect on the gate oxide of triple-well-structure	Hsu, WC; Liang, MS; Lin, CT; Chen, MC
國立交通大學	2014-12-08T15:41:51Z	A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film	Wang, JC; Chiao, SH; Lee, CL; Lei, TF; Lin, YM; Wang, MF; Chen, SC; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:40:39Z	Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane	Chiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:40:39Z	Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films	Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:40:31Z	Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contents	Chiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:39:57Z	Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier	Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:39:57Z	Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2	Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:39:52Z	Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane	Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:39:42Z	Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers	Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:39:40Z	TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier	Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:38:46Z	Annealing effect on boron high-energy-ion-implantation-induced defects in	Hsu, WC; Liang, MS; Chen, SC; Chen, MC
國立交通大學	2014-12-08T15:37:21Z	Effects of O-2- and N-2-plasma treatments on copper surface	Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:27:25Z	A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles	Chung, SS; Yih, CM; Cheng, SM; Liang, MS
國立交通大學	2014-12-08T15:27:02Z	Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide	Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS
國立交通大學	2014-12-08T15:27:02Z	Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation	Chen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS
國立交通大學	2014-12-08T15:27:01Z	Electrical reliability issues of integrating low-K dielectrics with Cu metallization	Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:57Z	Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs	Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:55Z	N-channel versus P-channel flash EEPROM - Which one has better reliabilities	Chung, SS; Liaw, ST; Yih, CM; Ho, ZH; Lin, CJ; Kuo, DS; Liang, MS
國立交通大學	2014-12-08T15:26:48Z	Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides	Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:48Z	Barrier characteristics of PECVD alpha-SiC : H dielectrics	Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:29Z	TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier	Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學	2014-12-08T15:26:17Z	Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology	Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:26:16Z	Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier	Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學	2014-12-08T15:26:10Z	The performance and reliability enhancement of ETOX P-channel flash EEPROM cell with P-doped floating-gate	Tsai, HW; Chiang, PY; Chung, SS; Kuo, DS; Liang, MS
國立交通大學	2014-12-08T15:25:51Z	The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology	Chung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:25:43Z	Effects of base oxide in HfSiO/SiO2 high-k gate stacks	Wu, WH; Chen, MC; Wang, MF; Hou, TH; Yao, LG; Jin, Y; Chen, SC; Liang, MS
國立交通大學	2014-12-08T15:18:40Z	Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks	Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS

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