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"liang ms"的相关文件
显示项目 11-20 / 56 (共6页)
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| 國立交通大學 |
2014-12-08T15:44:57Z |
Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides
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Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:44:39Z |
A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
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Yang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:44:13Z |
Characterization of hot-hole injection induced SILC and related disturbs in flash memories
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Yih, CM; Ho, ZH; Liang, MS; Chung, SS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
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Wu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
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Wu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:46Z |
Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:46Z |
A trap generation closed-form statistical model for intrinsic oxide breakdown
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Huang, HT; Chen, MJ; Su, CW; Chen, JH; Hou, CS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SSM; Yu, DCH; Liang, MS |
显示项目 11-20 / 56 (共6页)
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