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"liang ms"的相关文件
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| 國立交通大學 |
2014-12-08T15:43:09Z |
Generalized interconnect delay time and crosstalk models: I. Applications of interconnect optimization design
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Lee, TGY; Tseng, TY; Wong, SC; Yang, CJ; Liang, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Generalized interconnect delay time and crosstalk models: II. Crosstalk-induced delay time deterioration and worst crosstalk models
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Lee, TGY; Tseng, TY; Wong, SC; Yang, CJ; Liang, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:42:45Z |
Implantation induced defects in the retrograde well with a buried layer
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Hsu, WC; Liang, MS; Chen, MC |
| 國立交通大學 |
2014-12-08T15:42:27Z |
Post-implantation thermal annealing effect on the gate oxide of triple-well-structure
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Hsu, WC; Liang, MS; Lin, CT; Chen, MC |
| 國立交通大學 |
2014-12-08T15:41:51Z |
A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film
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Wang, JC; Chiao, SH; Lee, CL; Lei, TF; Lin, YM; Wang, MF; Chen, SC; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane
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Chiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films
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Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:31Z |
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contents
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Chiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
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