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机构 日期 题名 作者
國立交通大學 2014-12-08T15:40:39Z Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane Chiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:40:39Z Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:40:31Z Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contents Chiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:39:57Z Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:39:57Z Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2 Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:39:52Z Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:39:42Z Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:39:40Z TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:38:46Z Annealing effect on boron high-energy-ion-implantation-induced defects in Hsu, WC; Liang, MS; Chen, SC; Chen, MC
國立交通大學 2014-12-08T15:37:21Z Effects of O-2- and N-2-plasma treatments on copper surface Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS

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