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机构 日期 题名 作者
國立交通大學 2014-12-08T15:26:55Z N-channel versus P-channel flash EEPROM - Which one has better reliabilities Chung, SS; Liaw, ST; Yih, CM; Ho, ZH; Lin, CJ; Kuo, DS; Liang, MS
國立交通大學 2014-12-08T15:26:48Z Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:26:48Z Barrier characteristics of PECVD alpha-SiC : H dielectrics Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:26:29Z TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:26:17Z Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology Lee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS
國立交通大學 2014-12-08T15:26:16Z Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS
國立交通大學 2014-12-08T15:26:10Z The performance and reliability enhancement of ETOX P-channel flash EEPROM cell with P-doped floating-gate Tsai, HW; Chiang, PY; Chung, SS; Kuo, DS; Liang, MS
國立交通大學 2014-12-08T15:25:51Z The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology Chung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS
國立交通大學 2014-12-08T15:25:43Z Effects of base oxide in HfSiO/SiO2 high-k gate stacks Wu, WH; Chen, MC; Wang, MF; Hou, TH; Yao, LG; Jin, Y; Chen, SC; Liang, MS
國立交通大學 2014-12-08T15:18:40Z Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS

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