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Showing items 41-50 of 151  (16 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:34:46Z Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices Yu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP
國立交通大學 2014-12-08T15:27:03Z High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom Chin, A; Wu, YH; Chen, SB; Liao, CC; Chen, WJ
國立交通大學 2014-12-08T15:27:02Z Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser Chen, YF; Liao, CC; Lan, YP; Wang, SC
國立交通大學 2014-12-08T15:25:55Z High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology Chin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL
國立交通大學 2014-12-08T15:25:27Z Very high kappa and high density TiTaO MIM capacitors for analog and RF applications Chiang, KC; Chin, A; Lai, CH; Chen, WJ; Cheng, CF; Hung, BF; Liao, CC
國立交通大學 2014-12-08T15:18:59Z The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs Yu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP
國立交通大學 2014-12-08T15:16:56Z AC power loss and signal coupling in very large scale integration backend interconnects Chen, CC; Kao, HL; Liao, CC; Chin, A; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:16:53Z Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs Kao, HL; Chin, A; Liao, CC; Chen, CC; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:01:53Z In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP Chin, A; Liao, CC; Tsai, C
國立交通大學 2014-12-08T15:01:48Z Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAs Chin, A; Liao, CC; Chu, J; Li, SS

Showing items 41-50 of 151  (16 Page(s) Totally)
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