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國立交通大學 |
2016-03-28T00:04:08Z |
Low Interface Trap Densities and Enhanced Performance of AlGaN/GaNMOS High-Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer
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Liao, Chongnan; Zou, Xuming; Huang, Chun-Wei; Wang, Jingli; Zhang, Kai; Kong, Yuechan; Chen, Tangsheng; Wu, Wen-Wei; Xiao, Xiangheng; Jiang, Changzhong; Liao, Lei |
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